Combined visible light and infrared light-emitting diode (LED) therapy enhances wound healing after laser ablative resurfacing of photodamaged facial skin

2006 ◽  
Vol 21 (3) ◽  
pp. 165-175 ◽  
Author(s):  
Mario A. Trelles ◽  
Inés Allones ◽  
Esther Mayo
Keyword(s):  
Wound Healing ◽  
Visible Light ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Facial Skin ◽  
Light Emitting ◽  
Led Therapy

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Heat-resistant reflectors for enhanced 850-nm near infrared light-emitting diode efficiency

2021 ◽  
pp. 103879
Author(s):  
Hyung-Joo Lee ◽  
Gwang-Hoon Park ◽  
Jin-Su So ◽  
Choong-Hun Lee ◽  
Jae-Hoon Kim ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting ◽  
Heat Resistant

The Intellectual Lighting And Data Transmission System based On RGBW Light Emitting Diodes

2021 ◽  
pp. 63-68
Author(s):  
Daniil S. Shiryaev ◽  
Olga A. Kozyreva ◽  
Ivan S. Polukhin ◽  
Sergey A. Shcheglov ◽  
Svetlana A. Degtiareva ◽  
...  
Keyword(s):  
Visible Light ◽  
Data Transmission ◽  
Light Transmission ◽  
Transmission Rate ◽  
Light Emitting Diode ◽  
Spectral Characteristics ◽  
System Component ◽  
Transmission Channel ◽  
Error Vector Magnitude ◽  
Light Emitting

The system of intellectual lighting data transmission via visible light is developed and manufactured. Spectral characteristics of a downlink which uses the red crystal of a RGBW light emitting diode for data transfer were studied. The DALI protocol-based radiation chromaticity control system which allows us to set different lighting scenarios with constant data transmission rate was developed. The radiation chromaticity range covers almost the entire colour gamut in the colour space. The system of high-frequency matching of system component impedances was developed and frequency characteristics of the suggested scheme were studied for development of the system. Optimal parameters of the signal for visual light communication such as carrier frequency, modulation type and band were determined. Observation of the constellation diagram which represents different values of the complex amplitude of the keyed signal in the form of a complex number on a quadrature plane (cosine and sine components of the carrying signal) and of fixation of the amplitude of the error vector magnitude (EVM) was selected as a method of study of the transmission channel quality. The value of EVM in the visible light transmission channel was significantly lower for signals with amplitude modulation than for phase-manipulated signals. When implementing different lighting change scenarios, radiation of other crystals of the light emitting diode crystals not used for transmission did not lead to increase of EVM by more than one percent.

Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays Irradiation

2010 ◽  
Vol 173 ◽  
pp. 1-6 ◽  
Author(s):  
Haider F. Abdul Amir ◽  
Fuei Pien Chee
Keyword(s):  
Ionizing Radiation ◽  
Light Emitting Diode ◽  
Optoelectronic Devices ◽  
Third Party ◽  
Infrared Light ◽  
X Rays ◽  
Total Ionizing Dose ◽  
Light Emitting ◽  
Static Performance ◽  
Current Drives

In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation.

Effect of NASA Light-Emitting Diode Irradiation on Molecular Changes for Wound Healing in Diabetic Mice

2003 ◽  
Vol 21 (2) ◽  
pp. 67-74 ◽  
Author(s):  
Harry T. Whelan ◽  
Ellen V. Buchmann ◽  
Apsara Dhokalia ◽  
Mary P. Kane ◽  
Noel T. Whelan ◽  
...  
Keyword(s):  
Wound Healing ◽  
Light Emitting Diode ◽  
Diabetic Mice ◽  
Molecular Changes ◽  
Light Emitting
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