Susceptibility of flash ADCs to electromagnetic interference

2018 ◽  
Vol 81 ◽  
pp. 218-225 ◽  
Author(s):  
Simon Kennedy ◽  
Mehmet Rasit Yuce ◽  
Jean-Michel Redouté
Keyword(s):  
Electromagnetic Interference ◽  
Flash Adcs

High-voltage monitoring by the fiber-optic recirculating measuring system

2020 ◽  
pp. 38-44
Author(s):  
A. V. Polyakov ◽  
M. A. Ksenofontov
Keyword(s):  
Optical Fibers ◽  
High Voltage ◽  
Optical Sensors ◽  
Electromagnetic Interference ◽  
Fiber Optic ◽  
Electric Power Industry ◽  
Measuring System ◽  
Voltage Range ◽  
External Electromagnetic Fields ◽  
Optic Communication

Optical technologies for measuring electrical quantities attract great attention due to their unique properties and significant advantages over other technologies used in high-voltage electric power industry: the use of optical fibers ensures high stability of measuring equipment to electromagnetic interference and galvanic isolation of high-voltage sensors; external electromagnetic fields do not influence the data transmitted from optical sensors via fiber-optic communication lines; problems associated with ground loops are eliminated, there are no side electromagnetic radiation and crosstalk between the channels. The structure and operation principle of a quasi-distributed fiber-optic high-voltage monitoring system is presented. The sensitive element is a combination of a piezo-ceramic tube with an optical fiber wound around it. The device uses reverse transverse piezoelectric effect. The measurement principle is based on recording the change in the recirculation frequency under the applied voltage influence. When the measuring sections are arranged in ascending order of the measured effective voltages relative to the receiving-transmitting unit, a relative resolution of 0,3–0,45 % is achieved for the PZT-5H and 0,8–1,2 % for the PZT-4 in the voltage range 20–150 kV.

Analysis and Evaluation of Electromagnetic Interference between ThruChip Interface and LC-VCO

2016 ◽  
Vol E99.C (6) ◽  
pp. 659-662 ◽  
Author(s):  
Junichiro KADOMOTO ◽  
So HASEGAWA ◽  
Yusuke KIUCHI ◽  
Atsutake KOSUGE ◽  
Tadahiro KURODA
Keyword(s):  
Electromagnetic Interference ◽  
Analysis And Evaluation ◽  
Lc Vco

Analysis of Leakage Failures in Flash Memory Devices and Root Cause Identification

2000 ◽  
Author(s):  
J. N. C. de Luna ◽  
M. O. del Fierro ◽  
J. L. Muñoz
Keyword(s):  
Flash Memory ◽  
Electromagnetic Interference ◽  
Yield Loss ◽  
High Amplitude ◽  
Physical Analysis ◽  
Input Buffer ◽  
Automated Test Equipment ◽  
Root Cause ◽  
Root Cause Identification ◽  
Test Process

Abstract An advanced flash bootblock device was exceeding current leakage specifications on certain pins. Physical analysis showed pinholes on the gate oxide of the n-channel transistor at the input buffer circuit of the affected pins. The fallout contributed ~1% to factory yield loss and was suspected to be caused by electrostatic discharge or ESD somewhere in the assembly and test process. Root cause investigation narrowed down the source to a charged core picker inside the automated test equipment handlers. By using an electromagnetic interference (EMI) locator, we were able to observe in real-time the high amplitude electromagnetic pulse created by this ESD event. Installing air ionizers inside the testers solved the problem.

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