Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off

2013 ◽  
Vol 53 (2) ◽  
pp. 282-287 ◽  
Author(s):  
Luowei Zhou ◽  
Shengqi Zhou ◽  
Mingwei Xu
Keyword(s):  
Gate Voltage ◽  
Igbt Module ◽  
Bond Wires ◽  
Lift Off

Junction temperature estimation of IGBT module via a bond wires lift‐off independent parameter V gE‐np

2018 ◽  
Vol 11 (2) ◽  
pp. 320-328 ◽  
Author(s):  
Yingzhou Peng ◽  
Luowei Zhou ◽  
Xiong Du ◽  
Pengju Sun ◽  
Kaihong Wang ◽  
...  
Keyword(s):  
Junction Temperature ◽  
Independent Parameter ◽  
Temperature Estimation ◽  
Igbt Module ◽  
Bond Wires ◽  
Lift Off

scholarly journals A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 194
Author(s):  
Dan Luo ◽  
Minyou Chen ◽  
Wei Lai ◽  
Hongjian Xia ◽  
Xueni Ding ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Power Dissipation ◽  
Resistance Measurement ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Bond Wires ◽  
Solder Fatigue ◽  
Lift Off ◽  
Resistance Decrease

Bond wire lift-off will cause an increase of remaining wires’ power dissipation, which usually is ignored for healthy modules. However, only partial wires’ power dissipation transfers through thermal path from junction to case, which will lead to overestimate the whole power dissipation from collector to emitter pole and underestimate the calculated thermal resistance using the proportion of temperature difference to power dissipation. A FEM model is established to show the change of heat flow after bond wires were removed, the temperature of bond wires increases, and the measured thermal resistance decrease after bond wires lift-off. It is validated by experimental results using open package Insulated Gate Bipolar Transistor (IGBT) modules under different current conditions. This conclusion might be helpful to indicate the bond wires lift-off and solder fatigue by comparing the change of measured thermal resistance. Using the Kelvin setup to measure thermal resistance will cause misjudgment of failure mode due to the ignoring of wires’ power dissipation. This paper proposed that the lift-off of bond wires will lead to underestimating the thermal resistance measurement, which will overestimate the lifetime of IGBT module and misjudge its state of health.

Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge

2021 ◽  
Vol 36 (1) ◽  
pp. 888-897
Author(s):  
Kaihong Wang ◽  
Luowei Zhou ◽  
Pengju Sun ◽  
Xiong Du
Keyword(s):  
Time Duration ◽  
Igbt Module ◽  
Bond Wires ◽  
Gate Charge

scholarly journals The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Shengqi Zhou ◽  
Luowei Zhou ◽  
Suncheng Liu ◽  
Pengju Sun ◽  
Quanming Luo ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Diagnostic Method ◽  
Approximate Entropy ◽  
Key Factors ◽  
Silicon Chips ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Before And After ◽  
Parasitic Parameters

Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. For this reason, a novel diagnostic method based on the approximate entropy (ApEn) theory is presented in this paper, which can provide statistical diagnosis and allow the operator to replace defective IGBT modules timely. The proposed method is achieved by analyzing the cross ApEn of the gate voltages before and after the occurring of defects. Due to the local damage caused by aging, the intrinsic parasitic parameters of packaging materials or silicon chips inside the IGBT module such as parasitic inductances and capacitances may change over time, which will make remarkable variation in the gate voltage. That is to say the gate voltage is close coupled with the defects. Therefore, the variation is quantified and used as a precursor parameter to evaluate the health status of the IGBT module. Experimental results validate the correctness of the proposed method.

Reliability indicators for lift-off of bond wires in IGBT power-modules

1996 ◽  
Vol 36 (11-12) ◽  
pp. 1863-1866 ◽  
Author(s):  
B. Farokhzad ◽  
P. Türkes ◽  
E. Wolfgang ◽  
K. Goser
Keyword(s):  
Reliability Indicators ◽  
Power Modules ◽  
Bond Wires ◽  
Lift Off

Bond wire lift-off monitoring based on intersection point movement characteristic in IGBT module

2021 ◽  
pp. 105202
Author(s):  
Mingxing Du ◽  
Jinlei Xin ◽  
Hongbin Wang ◽  
Ziwei Ouyang ◽  
Kexin Wei
Keyword(s):  
Intersection Point ◽  
Igbt Module ◽  
Movement Characteristic ◽  
Bond Wire ◽  
Lift Off

Investigation of the Temperature Character of IGBT Failure Mode Based the 3-D Thermal-Electro Coupling FEM

2013 ◽  
Vol 655-657 ◽  
pp. 1576-1580 ◽  
Author(s):  
Pu Zhen He ◽  
Li Bing Zheng ◽  
Hua Chao Fang ◽  
Chun Lei Wang ◽  
Jun Hua
Keyword(s):  
Finite Elements ◽  
Boundary Conditions ◽  
Failure Mode ◽  
Failure Modes ◽  
Structure Design ◽  
Thermal Coupling ◽  
Finite Elements Modeling ◽  
Igbt Module ◽  
Lift Off ◽  
Influence Degree

Al wire bonding lift-off and solder delamination are the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D electro-thermal coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, and compares the influence degree of two kinds of failure modes to the performance of IGBT module. The results suggest the bonding lift-off has more influence than the solder delamination on the same load and boundary conditions. This method and the corresponding results help to evaluate these failure modes how they influence the performance of IGBT, determine the failure, establish the failure standards and find the optimization of structure design.

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