Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors

2012 ◽  
Vol 52 (7) ◽  
pp. 1342-1345 ◽  
Author(s):  
Magali Estrada ◽  
Antonio Cerdeira ◽  
Benjamin Iñiguez
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Transfer Characteristic ◽  
Oxide Thin Film ◽  
Amorphous Oxide ◽  
Bias Stress ◽  
Interface Charge ◽  
Dc Bias

Modeling the behavior of amorphous oxide thin film transistors before and after bias stress

2012 ◽  
Vol 52 (11) ◽  
pp. 2532-2536 ◽  
Author(s):  
A. Cerdeira ◽  
M. Estrada ◽  
B.S. Soto-Cruz ◽  
B. Iñiguez
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Amorphous Oxide ◽  
Bias Stress ◽  
Before And After

scholarly journals Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

2017 ◽  
Author(s):  
Haiting Xie ◽  
Guochao Liu ◽  
Lei Zhang ◽  
Yan Zhou ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Large Field ◽  
Stress Tests ◽  
Amorphous Oxide ◽  
Nitrogen Doped ◽  
Bias Stress

The nitrogen-doped amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) made the corresponding TFT devices exhibit quite large field-effect mobility due to the existence of double conduction channels. Especially, the a-IZO:N/a-IGZO:N TFTs showed even better electrical performance (μFE = 15.0 cm2·V-1·s-1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1×108) and stability (VTH shift of 1.5, -0.5, and -2.5 V for positive bias-stress, negative bias-stress and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, it was assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might be responsible for the better behaviors of the corresponding TFTs.

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