Process variation aware dual-Vth assignment technique for low power nanoscale CMOS design

2011 ◽  
Vol 51 (12) ◽  
pp. 2357-2365 ◽  
Author(s):  
Sudhakar S. Mande ◽  
Saurabh A. Chandorkar ◽  
A.N. Chandorkar
Keyword(s):  
Low Power ◽  
Process Variation ◽  
Nanoscale Cmos ◽  
Cmos Design

scholarly journals Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication

2015 ◽  
Vol E98.C (12) ◽  
pp. 1091-1104 ◽  
Author(s):  
Minoru FUJISHIMA ◽  
Shuhei AMAKAWA ◽  
Kyoya TAKANO ◽  
Kosuke KATAYAMA ◽  
Takeshi YOSHIDA
Keyword(s):  
Wireless Communication ◽  
Low Power ◽  
High Speed ◽  
Cmos Design

FinFET-Based Low Power Address Decoder under Process Variation

2016 ◽  
Author(s):  
Mukesh Chaturvedi ◽  
Akanksha Bhadoria ◽  
Vikas Mahor ◽  
Manisha Pattanaik
Keyword(s):  
Low Power ◽  
Process Variation

Frequency-Compensated Bulk-Driven TIA Suitable for Low-Voltage Low-Power Applications

2020 ◽  
pp. 2150121
Author(s):  
Urvashi Bansal ◽  
Maneesha Gupta ◽  
Niranjan Raj
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Transimpedance Amplifier ◽  
Frequency Compensation ◽  
Suitable Alternative ◽  
Small Signal Analysis ◽  
Cmos Design ◽  
Spiral Inductors ◽  
Compensation Technique ◽  
Good Agreement

The importance of a transimpedance amplifier in an optical transceiver is very well known. In this paper, a novel CMOS design of the bulk-driven transimpedance amplifier (BD-TIA) is given where the bridge-shunt peaking-based frequency compensation technique is exploited to improve frequency response. A pre-existing active inductor has been used for the same. The electrical characteristics and functioning of this inductor simulator make it a suitable alternative to both floating and grounded spiral inductors. In order to verify the workability of the proposed circuit, it has been simulated with TSMC CMOS 0.18[Formula: see text][Formula: see text]m process parameters. The proposed circuit is useful in low-voltage low-power VLSI applications as it uses a single supply of 0.75[Formula: see text]V. The power consumption of BD-TIA is very low, being 0.37[Formula: see text]mW, because a standard MOSFET has been replaced by a bulk-driven MOSFET (BDMOS), while the 3-dB bandwidth is observed to be 4.5[Formula: see text]GHz. The mathematical investigation and small signal analysis show that the simulation results are in good agreement.

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