scholarly journals Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

2011 ◽  
Vol 51 (5) ◽  
pp. 879-884 ◽  
Author(s):  
Soshi Sato ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
Kenji Ohmori ◽  
Kenji Natori ◽  
...  
Keyword(s):  
Cross Section ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Channel Cross Section ◽  
Electrical Characteristics

Structural effects of Channel Cross-Section on the Gate Capacitance of Silicon Nanowire Field-effect Transistors

2019 ◽  
Vol 34 (1) ◽  
pp. 87-92
Author(s):  
Soshi Sato ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
Kenji Ohmori ◽  
Kenji Natori ◽  
...  
Keyword(s):  
Cross Section ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Channel Cross Section ◽  
Structural Effects ◽  
Gate Capacitance

Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Operation Mode ◽  
Feedback Loops ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Nanowire Transistors ◽  
Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

Silicon Nanowire Biologically Sensitive Field Effect Transistors: Electrical Characteristics and Applications

2014 ◽  
Vol 14 (1) ◽  
pp. 273-287 ◽  
Author(s):  
Taiuk Rim ◽  
Chang-Ki Baek ◽  
Kihyun Kim ◽  
Yoon-Ha Jeong ◽  
Jeong-Soo Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Electrical Characteristics

scholarly journals Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yejin Yang ◽  
Young-Soo Park ◽  
Jaemin Son ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Drain Current ◽  
Memory Window ◽  
Interface Trap ◽  
Electrical Characteristics ◽  
The Difference ◽  
Trap Charges

AbstractIn this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I–V characteristics, memory window, and operation were analyzed using a commercial technology computer-aided design simulation. In an n-channel FBFET, the memory window narrows (widens) from 5.47 to 3.59 V (9.24 V), as the density of the positive (negative) trap charges increases. In contrast, in the p-channel FBFET, the memory window widens (narrows) from 5.38 to 7.38 V (4.18 V), as the density of the positive (negative) trap charges increases. Moreover, we investigate the difference in the output drain current based on the interface trap charges during the memory operation.

scholarly journals Electrical characteristics of asymmetrical silicon nanowire field-effect transistors

2011 ◽  
Vol 99 (22) ◽  
pp. 223518 ◽  
Author(s):  
Soshi Sato ◽  
Kuniyuki Kakushima ◽  
Kenji Ohmori ◽  
Kenji Natori ◽  
Keisaku Yamada ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Electrical Characteristics

Vertical surround-gated silicon nanowire impact ionization field-effect transistors

2007 ◽  
Vol 90 (14) ◽  
pp. 142110 ◽  
Author(s):  
M. T. Björk ◽  
O. Hayden ◽  
H. Schmid ◽  
H. Riel ◽  
W. Riess
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

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