Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1278-1282 ◽  
Author(s):  
N. Stojadinović ◽  
D. Danković ◽  
I. Manić ◽  
A. Prijić ◽  
V. Davidović ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Channel Power

Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET

2015 ◽  
Vol 24 (10) ◽  
pp. 106601 ◽  
Author(s):  
Danijel Danković ◽  
Ninoslav Stojadinović ◽  
Zoran Prijić ◽  
Ivica Manić ◽  
Vojkan Davidović ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Channel Power

scholarly journals MODELING AND PSPICE SIMULATION OF RADIATION STRESS INFLUENCE ON THRESHOLD VOLTAGE SHIFTS IN P-CHANNEL POWER VDMOS TRANSISTORS

2016 ◽  
Author(s):  
Miloš Marjanović ◽  
Danijel Danković ◽  
Vojkan Davidović ◽  
Aneta Prijić ◽  
Ninoslav Stojadinović ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Radiation Stress ◽  
Channel Power ◽  
Pspice Simulation ◽  
Stress Influence

scholarly journals Modeling and PSPICE simulation of NBTI effects in VDMOS transistors

2015 ◽  
Vol 12 (1) ◽  
pp. 69-79
Author(s):  
Milos Marjanovic ◽  
Danijel Dankovic ◽  
Aneta Prijic ◽  
Zoran Prijic ◽  
Nebojsa Jankovic ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Threshold Voltage ◽  
Experimental Results ◽  
Time Transfer ◽  
Channel Power ◽  
Pspice Simulation ◽  
Transfer Characteristics ◽  
Good Agreement

In this paper the results of modeling and simulation of NBTI effects in p-channel power VDMOS transistor have been presented. Based on the experimental results, the threshold voltage shifts and changes of transconductance during the NBT stress have been modeled and implemented in the PSPICE model of the IRF9520 transistor. By predefining the threshold voltage value before the NBT stress, and by assigning the stress time, transfer characteristics of the transistor are simulated. These characteristics are within (1.33?11.25)% limits in respect to the measured ones, which represents a good agreement.

Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors

2008 ◽  
Vol 47 (8) ◽  
pp. 6272-6276 ◽  
Author(s):  
Vojkan Davidović ◽  
Ninoslav Stojadinović ◽  
Danijel Danković ◽  
Snežana Golubović ◽  
Ivica Manić ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Bias ◽  
Channel Power

Phosphorous-outgassing-induced threshold voltage in p-channel power MOSFET devices

1998 ◽  
Author(s):  
Fuyu Lin ◽  
Richard De Souza ◽  
Richard Dynes ◽  
Shifeng Lu ◽  
Pat Schay ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Channel Power ◽  
Power Mosfet

scholarly journals The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET

2018 ◽  
Vol 33 (1) ◽  
pp. 81-86 ◽  
Author(s):  
Marija Obrenovic ◽  
Milic Pejovic ◽  
Djordje Lazarevic ◽  
Nenad Kartalovic
Keyword(s):  
Radiation Dose ◽  
Threshold Voltage ◽  
Gamma Ray ◽  
Dose Range ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Channel Power ◽  
Radiation Induced ◽  
Gamma Ray Irradiation

The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.

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