dc-Conduction mechanism in lanthanum–manganese oxide films grown on p-Si substrate

2008 ◽  
Vol 48 (3) ◽  
pp. 395-400 ◽  
Author(s):  
A.A. Dakhel
Keyword(s):  
Manganese Oxide ◽  
Conduction Mechanism ◽  
Oxide Films ◽  
Si Substrate ◽  
Lanthanum Manganese Oxide

scholarly journals On the Origin of the OER Activity of Ultrathin Manganese Oxide Films

2021 ◽  
Vol 13 (2) ◽  
pp. 2428-2436
Author(s):  
Paul Plate ◽  
Christian Höhn ◽  
Ulrike Bloeck ◽  
Peter Bogdanoff ◽  
Sebastian Fiechter ◽  
...  
Keyword(s):  
Manganese Oxide ◽  
Oxide Films

Interface properties and electronic structure of ultrathin manganese oxide films on Ag(001)

2007 ◽  
Vol 601 (18) ◽  
pp. 4484-4487 ◽  
Author(s):  
M. Nagel ◽  
I. Biswas ◽  
H. Peisert ◽  
T. Chassé
Keyword(s):  
Electronic Structure ◽  
Manganese Oxide ◽  
Oxide Films ◽  
Interface Properties

Facile Formation of Nanostructured Manganese Oxide Films as High‐Performance Catalysts for the Oxygen Evolution Reaction

ChemSusChem ◽  
2018 ◽  
Vol 11 (15) ◽  
pp. 2554-2561 ◽  
Author(s):  
Carsten Walter ◽  
Prashanth W. Menezes ◽  
Stefan Loos ◽  
Holger Dau ◽  
Matthias Driess
Keyword(s):  
Manganese Oxide ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
High Performance ◽  
Oxide Films

Effects of Ion Implantation Doping on the Formation of Titanium Silicide on the Diffusion Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
H. Matsui ◽  
H. Ohtsuki ◽  
M. Ino ◽  
S. Ushio
Keyword(s):  
Ion Implantation ◽  
Oxide Films ◽  
Titanium Silicide ◽  
Si Substrate ◽  
Surface Layers ◽  
Critical Dose ◽  
Diffusion Layers

ABSTRACTSi samples, with and without masking oxide films, implanted with various doses of As, P, or BF2 have been evaluated on the formation of titanium suicides from titanium films. In all cases, suicide reaction for implantation with masking oxide films is more difficult than that for implantation without masking oxide films. Suicide reaction becomes more difficult with decreasing implant energy in the range over a critical dose. In the case of implantation with masking oxide films, knocked oxygen has been found at the surface of Si substrate. Suicide formation after removing the surface layers containing considerable amount of knocked oxygen with argon back-sputtering is as easy as suicide formation for implantation without masking oxide. The difficulty of Ti silicidation for implantation with masking oxide films is believed to be due to the effects of interference from knocked oxygen.

Manganese Oxide Anodized from Manganese Films Electrodeposited at Different Cathodic Currents and its Capacitive Performance

2014 ◽  
Vol 926-930 ◽  
pp. 932-937 ◽  
Author(s):  
Wen Po Li ◽  
Xiu Li Zuo ◽  
Tang Man Lv ◽  
Sheng Tao Zhang
Keyword(s):  
Manganese Oxide ◽  
Photoelectron Spectroscopy ◽  
Oxide Films ◽  
Oxide Coating ◽  
Oxide Surface ◽  
Nanostructured Films ◽  
Mn Oxide ◽  
Sulfate Solutions ◽  
Sem Study ◽  
Electro Oxidation

Nanostructured manganese oxide films were obtained by electro-oxidation of manganese films electrodeposited at two typical cathodic currents of 65 mA cm-2 (EDM-65 oxide) and 150 mA cm-2 (EDM-150 oxide) from sulfate solutions with additives. Obtained Mn oxide films were studied by scanning electron microscope, X-ray photoelectron spectroscopy, cyclic voltammetry and AC impedance. SEM study revealed that the Mn oxide films were mesoporous nanostructures on the EDM-150 oxide surface, while the EDM-65 oxide coating is homogeneous and compact. XPS results indicate that EDM-150 oxide had a higher content of anhydrous Mn oxide and structure water, which means that it had more anhydrous characteristics as compared to EDM-65 oxide. It was shown that porous nanostructured films showed good capacitive behavior for applications in electrochemical supercapacitors. The porous nanostructured films prepared at 150 mA cm-2 showed higher specific capacitance (SC) compared to the SC of the EDM-65 oxide films. The highest SC of 148 F g-1 in a voltage window of 0.8 V was obtained in 0.1 M Na2SO4 solutions at a scan rate of 25 mV s-1.

Sign in / Sign up

Export Citation Format

Share Document