ABSTRACTTo clarify the reaction process of Co and Fe with a oxide layer on Si substrates, the annealing processes were analyzed using spectroscopic photoemission and low-energy electron microscopy for a special surface where oxide areas and clean substrate areas (voids) coexist closely in a micrometer-order view. From analyses of XAS spectra and edge jump ratios obtained from the photoemission electron microscopy image, we clarified that Co atoms in the void area remain because of the formation of silicides, but that those on the oxide layer disappear because metallic Co atoms easily diffuse. In contrast, in the case of Fe, we found the formation of various silicides and their gradual diffusion into Si substrate even in the form of silicides.
A median-Gaussian filtering framework for Moiré pattern noise removal from X-ray microscopy image