Interaction of chemical processes over Pt wire and reactive flows of flame penetration through obstacles in the presence of iron nanopowder

2017 ◽  
Vol 27 (4) ◽  
pp. 387-389 ◽  
Author(s):  
Michail I. Alymov ◽  
Nikolai M. Rubtsov ◽  
Victor I. Chernysh ◽  
Georgii I. Tsvetkov ◽  
Kirill Ya. Troshin
Keyword(s):  
Chemical Processes ◽  
Reactive Flows

Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures

1991 ◽  
Vol 223 ◽  
Author(s):  
Hans P. Zappe ◽  
Gudrun Kaufel
Keyword(s):  
Chemical Processes ◽  
Low Energy ◽  
Electrical Behavior ◽  
Rapid Thermal Anneal ◽  
High Temperature Anneal ◽  
Significant Damage ◽  
Low Energies ◽  
Long Time ◽  
Physical Plasma

ABSTRACTThe effect of numerous plasma reative ion etch and physical milling processes on the electrical behavior of GaAs bulk substrates has been investigated by means of electric microwave absorption. It was seen that plasma treatments at quite low energies may significantly affect the electrical quality of the etched semiconductor. Predominantly physical plasma etchants (Ar) were seen to create significant damage at very low energies. Chemical processes (involving Cl or F), while somewhat less pernicious, also gave rise to electrical substrate damage, the effect greater for hydrogenic ambients. Whereas rapid thermal anneal treatments tend to worsen the electrical integrity, some substrates respond positively to long-time high temperature anneal steps.

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