Characterization and ellipsometric investigation of high-quality ZnO and ZnO(Ga2O3) thin alloys by reactive electron-beam co-evaporation technique

2006 ◽  
Vol 37 (10) ◽  
pp. 1080-1085 ◽  
Author(s):  
R. Al Asmar ◽  
J.-P. Atanas ◽  
Y. Zaatar ◽  
J. Podlecki ◽  
A. Foucaran
Keyword(s):  
Electron Beam ◽  
High Quality ◽  
Evaporation Technique

Fabrication and characterisation of high quality ZnO thin films by reactive electron beam evaporation technique

2005 ◽  
Vol 36 (8) ◽  
pp. 694-699 ◽  
Author(s):  
R. Al Asmar ◽  
G. Ferblantier ◽  
J.L. Sauvajol ◽  
A. Giani ◽  
A. Khoury ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Zno Thin Films ◽  
High Quality ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

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