Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure

2012 ◽  
Vol 95 ◽  
pp. 112-115 ◽  
Author(s):  
Meiguang Zhu ◽  
Jian Zhang ◽  
Huina Hou
2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.


2006 ◽  
Vol 504 (1-2) ◽  
pp. 86-90 ◽  
Author(s):  
A.R. Saha ◽  
S. Chattopadhyay ◽  
C. Bose ◽  
C.K. Maiti

2016 ◽  
Vol 707 ◽  
pp. 012018 ◽  
Author(s):  
M. Abdolahpour Salari ◽  
E. Şenarslan ◽  
B. Güzeldir ◽  
M. Sağlam

2014 ◽  
Vol 22 ◽  
pp. 92-100 ◽  
Author(s):  
Wadi Bachir Bouiadjra ◽  
Mustapha amine Kadaoui ◽  
Abdelkader Saidane ◽  
Mohamed Henini ◽  
Muhammad Shafi

2014 ◽  
Vol 72 ◽  
pp. 344-351 ◽  
Author(s):  
M. Mamor ◽  
K. Bouziane ◽  
A. Tirbiyine ◽  
H. Alhamrashdi

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