Enhancement of light extraction efficiency of GaN-based light-emitting diode using ZnO sol–gel direct imprinting

2011 ◽  
Vol 88 (11) ◽  
pp. 3278-3281 ◽  
Author(s):  
Seong-Hwan Lee ◽  
Kyeong-Jae Byeon ◽  
Hyoungwon Park ◽  
Joong-Yeon Cho ◽  
Ki-Yeon Yang ◽  
...  
Keyword(s):  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
Sol Gel ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting

Improved Light Extraction Efficiency of Light-Emitting Diode Grown on Nanoscale-Silicon-Dioxide-Patterned Sapphire Substrate

2020 ◽  
Vol 12 (5) ◽  
pp. 647-651 ◽  
Author(s):  
Young Hoon Sung ◽  
Jaemin Park ◽  
Eun-Seo Choi ◽  
Hee Chul Lee ◽  
Heon Lee
Keyword(s):  
Silicon Dioxide ◽  
Sapphire Substrate ◽  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Wafer ◽  
Luminescence Efficiency

A conical-shaped Si dioxide nano-pattern was employed to sapphire substrate in order to improve the light extraction efficiency of light-emitting diodes. The conical-shaped Si dioxide nano-patterns were fabricated on a 2-inch sapphire wafer using direct imprinting of hydrogen silsesquioxane material. A blue-LED structure was grown on conical-shaped silicon-dioxide nano-patterned sapphire substrates. Photoluminescence and electroluminescence measurements were used to confirm the effectiveness of the nanoscale Si oxide patterned sapphire. An improvement in the luminescence efficiency was observed when nanoscale Si oxide patterned sapphire substrate was used. 1.5 times higher PL intensity and 1.6 times higher EL intensity were observed for GaN LED structure grown on nanoscale Si oxide patterned sapphire, compared to LED structure grown on conventional flat sapphire wafer.

Integrating Surface Textures on ZnO Substrate for High Light Extraction Efficiency Light-Emitting Diode

2014 ◽  
Vol 118 (27) ◽  
pp. 14894-14898 ◽  
Author(s):  
Qinghong Zheng ◽  
Dan Zhang ◽  
Jin Huang ◽  
Yonghao Wang ◽  
Feng Huang
Keyword(s):  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
High Light ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Surface Textures

scholarly journals GEOMETRICAL ANALYSIS OF LIGHT-EMITTING DIODE FOR ENHANCING EXTRACTION EFFICIENCY

2020 ◽  
Vol 15 (6) ◽  
pp. 68-84
Author(s):  
ADAM SHAARI ◽  
◽  
AHMAD FAKHRURRAZI AHMAD NOORDEN ◽  
SAIFUL NAJMEE MOHAMAD ◽  
SUZAIRI DAUD ◽  
...  
Keyword(s):  
Contact Area ◽  
Indium Tin Oxide ◽  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Current Spreading ◽  
Light Emitting ◽  
Uniform Current ◽  
Electrode Contact

A non-uniform current spreading in the current spreader can greatly reduce the efficiency of the light-emitting diode (LED). The effects of the electrode contact area to the spreading layer towards extraction efficiency of LED chips is analysed in analytical simulations. Length of current spreading and light extraction efficiency is analysed for variation of contact area. The contact area value is varied by changing the shape of the electrode and the value of width of contact area. The increase in contact area decreases light extraction efficiency as more light are absorbed by the bottom electrode surface. The effective current spreading length for Indium Tin Oxide (ITO) of thickness 300nm is 36.44µm. The 6 strips ‘fork’ design is the most optimum. The design has the most area for photons produced in active region to escape without reducing the area cover with current density. This enables the chip to has more extraction efficiency with more uniform current spreading.

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