Silicon single-electron transistor fabricated by anisotropic etch and oxidation

2006 ◽  
Vol 83 (4-9) ◽  
pp. 1710-1713 ◽  
Author(s):  
G. Pennelli ◽  
M. Piotto ◽  
G. Barillaro
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Anisotropic Etch

Evidence for activated conduction in a single electron transistor

2001 ◽  
Vol 89 (1) ◽  
pp. 410-419 ◽  
Author(s):  
Nicole Y. Morgan ◽  
David Abusch-Magder ◽  
Marc A. Kastner ◽  
Yasuo Takahashi ◽  
Hiroyuki Tamura ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistor

The current analysis of a single electron transistor based on double graphene nanoscroll island

2021 ◽  
Vol 327 ◽  
pp. 114234
Author(s):  
Vahideh Khademhosseini ◽  
Daryoosh Dideban ◽  
Mohammad Taghi Ahmadi
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Current Analysis

Investigating a Fluorobenzene Based Single Electron Transistor As a Toxic Gas Sensor

2021 ◽  
Author(s):  
Kumar Gaurav ◽  
Boddepalli SanthiBhushan ◽  
Ravi Mehla ◽  
Anurag Srivastava
Keyword(s):  
Gas Sensor ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Toxic Gas

Charge transport and photon-assisted tunneling in the NSN single-electron transistor

1994 ◽  
Vol 203 (3-4) ◽  
pp. 327-339 ◽  
Author(s):  
J.M. Hergenrother ◽  
M.T. Tuominen ◽  
J.G. Lu ◽  
D.C. Ralph ◽  
M. Tinkham
Keyword(s):  
Charge Transport ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Assisted Tunneling

scholarly journals Conductance of the single-electron transistor for arbitrary tunneling strength

2000 ◽  
Vol 62 (15) ◽  
pp. 9955-9958 ◽  
Author(s):  
Georg Göppert ◽  
Bruno Hüpper ◽  
Hermann Grabert
Keyword(s):  
Single Electron ◽  
Single Electron Transistor

Single electron transistor: Energy-level broadening effect and thermionic contribution

2017 ◽  
Vol 51 (12) ◽  
pp. 1656-1660
Author(s):  
A. Nasri ◽  
A. Boubaker ◽  
W. Khaldi ◽  
B. Hafsi ◽  
A. Kalboussi
Keyword(s):  
Energy Level ◽  
Single Electron ◽  
Single Electron Transistor

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

Sign in / Sign up

Export Citation Format

Share Document