Diffusion barrier performance of reactively sputtered Ta–W–N between Cu and Si

2004 ◽  
Vol 75 (3) ◽  
pp. 309-315 ◽  
Author(s):  
Yuzhang Liu ◽  
Shuangxi Song ◽  
Dali Mao ◽  
Huiqin Ling ◽  
Ming Li
Keyword(s):  
Diffusion Barrier ◽  
Barrier Performance

First-principles investigation of copper diffusion barrier performance in defective 2D layered materials

2022 ◽  
Author(s):  
Manareldeen Ahmed ◽  
Yan Li ◽  
Wenchao Chen ◽  
Erping Li
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
First Principles ◽  
Energy Barrier ◽  
2D Materials ◽  
Diffusion Path ◽  
Layered Materials ◽  
Vacancy Defects ◽  
2D Layered Materials ◽  
Barrier Performance

Abstract This paper investigates the diffusion barrier performance of 2D layered materials with pre-existing vacancy defects using first-principles density functional theory. Vacancy defects in 2D materials may give rise to a large amount of Cu accumulation, and consequently, the defect becomes a diffusion path for Cu. Five 2D layered structures are investigated as diffusion barriers for Cu, i.e., graphene with C vacancy, hBN with B/N vacancy, and MoS2 with Mo/2S vacancy. The calculated energy barriers using climbing image - nudged elastic band show that MoS2-V2S has the highest diffusion energy barrier among other 2D layers, followed by hBN-VN and graphene. The obtained energy barrier of Cu on defected layer is found to be proportional to the length of the diffusion path. Moreover, the diffusion of Cu through vacancy defects is found to modulate the electronic structures and magnetic properties of the 2D layer. The charge density difference shows that there exists a considerable charge transfer between Cu and barrier layer as quantified by Bader charge. Given the current need for an ultra-thin diffusion barrier layer, the obtained results contribute to the field of application of 2D materials as Cu diffusion barrier in the presence of mono-vacancy defects.

scholarly journals Diffusion Barrier Performance of AlCrTaTiZr/AlCrTaTiZr-N High-Entropy Alloy Films for Cu/Si Connect System

Entropy ◽  
2020 ◽  
Vol 22 (2) ◽  
pp. 234
Author(s):  
Chunxia Jiang ◽  
Rongbin Li ◽  
Xin Wang ◽  
Hailong Shang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Intermetallic Compounds ◽  
Diffusion Barrier ◽  
Lattice Mismatch ◽  
Copper Film ◽  
Amorphous Structure ◽  
High Entropy Alloy ◽  
Alloy Films ◽  
High Entropy ◽  
Atom Diffusion ◽  
Barrier Performance

In this study, high-entropy alloy films, namely, AlCrTaTiZr/AlCrTaTiZr-N, were deposited on the n-type (100) silicon substrate. Then, a copper film was deposited on the high-entropy alloy films. The diffusion barrier performance of AlCrTaTiZr/AlCrTaTiZr-N for Cu/Si connect system was investigated after thermal annealing for an hour at 600 °C, 700 °C, 800 °C, and 900 °C. There were no Cu-Si intermetallic compounds generated in the Cu/AlCrTaTiZr/AlCrTaTiZr-N/Si film stacks after annealing even at 900 °C through transmission electron microscopy (TEM) and atomic probe tomography (APT) analysis. The results indicated that AlCrTaTiZr/AlCrTaTiZr-N alloy films can prevent copper diffusion at 900 °C. The reason was investigated in this work. The amorphous structure of the AlCrTaTiZr layer has lower driving force to form intermetallic compounds; the lattice mismatch between the AlCrTaTiZr and AlCrTaTiZ-rN layers increased the diffusion distance of the Cu atoms and the difficulty of the Cu atom diffusion to the Si substrate.

Diffusion barrier performance of amorphous W–Ti–N films in Cu metallization

Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1270-1274 ◽  
Author(s):  
Wang Qingxiang ◽  
Liang Shuhua ◽  
Wang Xianhui ◽  
Fan Zhikang
Keyword(s):  
Diffusion Barrier ◽  
Cu Metallization ◽  
Barrier Performance

Influence of film structure and composition on diffusion barrier performance of SiOx thin films deposited by PECVD

2006 ◽  
Vol 200 (14-15) ◽  
pp. 4564-4571 ◽  
Author(s):  
A. Grüniger ◽  
A. Bieder ◽  
A. Sonnenfeld ◽  
Ph. Rudolf von Rohr ◽  
U. Müller ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Film Structure ◽  
Barrier Performance

Research of CoSiN Film as Diffusion Barrier in ULSI-Cu Metallization

2014 ◽  
Vol 988 ◽  
pp. 130-133
Author(s):  
Zai Yu Zhang ◽  
Ma Jia Wu ◽  
Xiu Hua Chen
Keyword(s):  
Thermal Stability ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Diffusion Barrier ◽  
Good Thermal Stability ◽  
Cu Metallization ◽  
Diffusion Barrier Layer ◽  
Barrier Performance ◽  
Si Films

CoSiN film can be used as diffusion barrier layer in ULSI-Cumetallization.CoSiN/Cu/CoSiN/SiO2/Si films are prepared by magnetron sputtering technology. Four-point-probe, SGC-10,Atomic forced microscopy (AFM) are used to detect the resistivity,film thickness and surface morphology. It is investigated the barrier performance of CoSiN film for Cu metallization in sub-45nm technology. The results shows that the resistivity and the components ofCoSiN/Cu/CoSiN/SiO2/Si film do not have the obvious change after being annealing at 550°C in Ar atomosphere, and CoSiN film can keep good barrier performance for Cu line. This multi-film shows good thermal stability .

Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film

1998 ◽  
Vol 72 (22) ◽  
pp. 2832-2834 ◽  
Author(s):  
Joon Seop Kwak ◽  
Hong Koo Baik ◽  
Jong-Hoon Kim ◽  
Sung-Man Lee
Keyword(s):  
Diffusion Barrier ◽  
Cu Metallization ◽  
Barrier Performance
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