Effect of hole doping on structural, electronic and magneto-transport properties of Sr2IrO4

2018 ◽  
Vol 5 (7) ◽  
pp. 15445-15450
Author(s):  
Imtiaz Noor Bhatti ◽  
A.K. Pramanik
Keyword(s):  
Transport Properties ◽  
Hole Doping

Effects of photoinduced hole doping on transport properties of YBa2Cu3Oygrain boundary junctions

1994 ◽  
Vol 76 (6) ◽  
pp. 3679-3683 ◽  
Author(s):  
K. Tanabe ◽  
F. Hosseini Teherani ◽  
S. Kubo ◽  
H. Asano ◽  
M. Suzuki
Keyword(s):  
Transport Properties ◽  
Hole Doping

Pressure and doping effects on the structural stability of thermoelectric BaAg2Te2

2021 ◽  
Author(s):  
Hulei Yu ◽  
Wen Li ◽  
Yanzhong Pei ◽  
Yue Chen
Keyword(s):  
Transport Properties ◽  
Structural Stability ◽  
Electrical Transport ◽  
Ab Initio Molecular Dynamics ◽  
Hole Doping ◽  
Electrical Transport Properties ◽  
Electron Hole ◽  
Doping Effects ◽  
Potential Applications ◽  
Dynamics Simulations

Abstract Ternary chalcogenides have attracted great attention for their potential applications in thermoelectric devices. Here, we investigate the pressure and doping effects on the structural stability of BaAg2Te2 using first-principles calculations. Imaginary frequencies are observed in the calculated phonon dispersions of the reported Pnma structure, indicating that Pnma BaAg2Te2 is lattice dynamically unstable at 0 K. Although the imaginary phonon frequencies are small, we find that hydrostatic pressure cannot effectively stabilize the structure. Based on the soft mode at Γ point, a new monoclinic phase with a space group of P21/c is proposed. From ab-initio molecular dynamics simulations, the P21/c phase is predicted to transform to the Pnma phase at a low temperature below 100 K. Electron/hole doping effects on the lattice dynamical stability of the Pnma phase are also studied. It is found that hole doping is superior to electron doping in stabilizing the Pnma phase. Further study on the electrical transport properties of the Pnma phase reveals a higher performance along b axis than that along the other two directions. This work paves an avenue to better understand the structural stability and electrical transport properties of thermoelectric BaAg2Te2.

Tuning the electron transport properties of boron-nitride nanoribbons with electron and hole doping

RSC Advances ◽  
2014 ◽  
Vol 4 (89) ◽  
pp. 48212-48219 ◽  
Author(s):  
L. L. Song ◽  
X. H. Zheng ◽  
H. Hao ◽  
J. Lan ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Boron Nitride ◽  
Transport Properties ◽  
Hole Doping ◽  
Electron Transport Properties ◽  
Boron Nitride Nanoribbons

C chain doped BN nanoribbons can be either metallic or semiconducting, depending on how the C chains are located.

Phase Diagram and Anisotropic Transport Properties of Nd1-xSrxMnO3 Crystals

1997 ◽  
Vol 494 ◽  
Author(s):  
H. Kuwahara ◽  
T. Okuda ◽  
Y. Tomioka ◽  
T. Kimura ◽  
A. Asamitsu ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Transport Properties ◽  
Lattice Parameter ◽  
Hole Doping ◽  
Orbital Ordering ◽  
Metallic Behavior ◽  
Magnetic Structures ◽  
Electronic Phase ◽  
Spin Polarized ◽  
Perovskite Type

ABSTRACTWe have investigated electronic transport and magnetic properties of perovskite-type Nd1-xSrxMnO3 crystals with change of controlled hole-doping level (0.30≤x≤0.80). The electronic phase diagram of Nd1-xSrxMnO3 was obtained by systematic measurements of magnetization (magnetic structure), resistivity, and lattice parameter. We have also studied the anisotropie transport properties of x=0.50 and 0.55 crystals with different magnetic structures: CE-type antiferromagnetic (AF) structure for x=0.50 and A-type layered AF one for x=0.55. In the case of the x=0.55 crystal, the metallic behavior was observed within the ferromagnetic (F) layers, while along the AF-coupling direction the crystal remains insulating over the whole temperature region. The observed large anisotropy is due to the magnetic as well as orbital-ordering induced confinement of the spin-polarized carriers within the F sheets. The nearly isotropie transport behavior has been confirmed for the CE-type AF charge-ordered state in the x=0.50 crystal.

scholarly journals Magnetic and transport properties of a coupled Hubbard bilayer with electron and hole doping

2008 ◽  
Vol 77 (14) ◽  
Author(s):  
K. Bouadim ◽  
G. G. Batrouni ◽  
F. Hébert ◽  
R. T. Scalettar
Keyword(s):  
Transport Properties ◽  
Hole Doping

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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