Improvement in thermoelectric properties of CaMnO 3 by Bi doping and hot pressing

2017 ◽  
Vol 4 (5) ◽  
pp. 6289-6295 ◽  
Author(s):  
Supasit Paengson ◽  
Panida Pilasuta ◽  
Kunchit Singsoog ◽  
Wanatchaporn Namhongsa ◽  
Wairut Impho ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Bi Doping

scholarly journals Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacuum Hot Pressing

2019 ◽  
Vol 9 (8) ◽  
pp. 1609 ◽  
Author(s):  
A. K. M. Ashiquzzaman Shawon ◽  
Soon-Chul Ur
Keyword(s):  
Mechanical Properties ◽  
Intermetallic Compound ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Single Phase ◽  
Aluminum Antimonide ◽  
Simple Method ◽  
Group Iii ◽  
Indirect Band Gap ◽  
First Time

Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb is one of the least discovered of this family of semiconductors. Bulk synthesis of AlSb has been reported on numerous occasions, but obtaining a single phase has always proven to be extremely difficult. This work reports a simple method for the synthesis of single-phase AlSb. Subsequently, consolidation was done into a near single-phase highly dense semiconductor in a form usable for thermoelectric applications. Further, the thermoelectric properties of this system are accounted for the first time. In addition, the mechanical properties of the intermetallic compound are briefly discussed for a possibility of further use.

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
A Value ◽  
Si Doped

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.

Role of Bi doping in thermoelectric properties of CaMnO3

2015 ◽  
Vol 628 ◽  
pp. 347-351 ◽  
Author(s):  
Rezaul Kabir ◽  
Ruoming Tian ◽  
Tianshu Zhang ◽  
Richard Donelson ◽  
Thiam Teck Tan ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Bi Doping

Microwave activated hot pressing: A new opportunity to improve the thermoelectric properties of n⿿type Bi 2 Te 3⿿x Se x bulks

2016 ◽  
Vol 83 ◽  
pp. 122-127 ◽  
Author(s):  
Zhenzhou Rong ◽  
Xi⿿an Fan ◽  
Fan Yang ◽  
Xinzhi Cai ◽  
Xuewu Han ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Hot Pressing

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

2021 ◽  
Author(s):  
Lijun Zhao ◽  
Mingyuan Wang ◽  
Jian Yang ◽  
Jiabin Hu ◽  
Yuan Zhu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Tem Analysis ◽  
Amorphous Phases ◽  
Element Doping ◽  
Bi Doping ◽  
Earth Abundant ◽  
Te Material ◽  
P Type ◽  
Constituent Elements

Abstract Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally-friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1 − xBixSe4 (x = 0-0.04) samples were fabricated through melting and hot pressing (HP) process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2 − xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWcm− 1K− 2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm− 1K− 1 and thermal conductivity (κtot) of ~ 0.62 Wm− 1K− 1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times more than that of pristine Cu3SbSe4. This work shows that isovalent heavy-element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.

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