Tuneable Structural and Optical Properties of Crystalline InGaO3(ZnO)n Nanoparticles Synthesized via the Solid-phase Diffusion Process Using a Solution-based Precursor

2016 ◽  
Vol 3 (2) ◽  
pp. 313-318
Author(s):  
Yujie Guo ◽  
Yang Song ◽  
Jean Pierre Locquet ◽  
Jin Won Seo
Keyword(s):  
Optical Properties ◽  
Diffusion Process ◽  
Solid Phase ◽  
Structural And Optical Properties ◽  
Phase Diffusion

Formation of crystalline InGaO3(ZnO)nnanowires via the solid-phase diffusion process using a solution-based precursor

2015 ◽  
Vol 26 (49) ◽  
pp. 495601 ◽  
Author(s):  
Yujie Guo ◽  
Bart Van Bilzen ◽  
Jean Pierre Locquet ◽  
Jin Won Seo
Keyword(s):  
Diffusion Process ◽  
Solid Phase ◽  
Phase Diffusion

Ion-Beam-Induced Epitaxy and Solid Phase Epitaxy of Sigec on Si Formed by Ge and C Ion Implantation and their Structural and Optical Properties

1995 ◽  
Vol 388 ◽  
Author(s):  
N. Kobayashi ◽  
H. Katsumata ◽  
Y. Makita ◽  
M. Hasegawa ◽  
N. Hayashi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Crystallization Process ◽  
Solid Phase ◽  
Ion Beam ◽  
Line Emission ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Strain Compensation

AbstractEpitaxial layers of Si1-x-yGexCy on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400keV Ge and ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS-channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si1-x-yGexCy/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si1-x-yGexCy/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I1 peak with/without I1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. these optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.

Structural and optical properties of solid-phase singlet oxygen photosensitizers based on fullerene aqueous suspensions

2008 ◽  
Vol 105 (5) ◽  
pp. 711-719 ◽  
Author(s):  
I. M. Belousova ◽  
V. P. Belousov ◽  
V. M. Kiselev ◽  
T. D. Murav’eva ◽  
I. M. Kislyakov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Singlet Oxygen ◽  
Solid Phase ◽  
Structural And Optical Properties ◽  
Aqueous Suspensions

Structural and Optical Properties of Cu2ZnSn(SxSe1–x)4 Thin Films

2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural And Optical Properties

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

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