Designing tunable band-gap and magnetization at room-temperature in Pb(Ti1-M)O3-δ (M=Ni and Pd) thin films

2016 ◽  
Vol 185 ◽  
pp. 323-326 ◽  
Author(s):  
Wenliang Zhou ◽  
Hongmei Deng ◽  
Pingxiong Yang ◽  
Junhao Chu
2019 ◽  
Vol 109 ◽  
pp. 101-106 ◽  
Author(s):  
Dongsheng Gao ◽  
Xiangdong Gao ◽  
Yongqing Wu ◽  
Tongtong Zhang ◽  
Jingnan Yang ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Desman P. Gulo ◽  
Han Yeh ◽  
Wen-Hao Chang ◽  
Hsiang-Lin Liu

Abstract PtSe2 has received substantial research attention because of its intriguing physical properties and potential practical applications. In this paper, we investigated the optical properties of bilayer and multilayer PtSe2 thin films through spectroscopic ellipsometry over a spectral range of 0.73–6.42 eV and at temperatures between 4.5 and 500 K. At room temperature, the spectra of refractive index exhibited several anomalous dispersion features below 1000 nm and approached a constant value in the near-infrared frequency range. The thermo-optic coefficients of bilayer and multilayer PtSe2 thin films were (4.31 ± 0.04) × 10−4/K and (–9.20 ± 0.03) × 10−4/K at a wavelength of 1200 nm. Analysis of the optical absorption spectrum at room temperature confirmed that bilayer PtSe2 thin films had an indirect band gap of approximately 0.75 ± 0.01 eV, whereas multilayer PtSe2 thin films exhibited semimetal behavior. The band gap of bilayer PtSe2 thin films increased to 0.83 ± 0.01 eV at 4.5 K because of the suppression of electron–phonon interactions. Furthermore, the frequency shifts of Raman-active Eg and A1g phonon modes of both thin films in the temperature range between 10 and 500 K accorded with the predictions of the anharmonic model. These results provide basic information for the technological development of PtSe2-based optoelectronic and photonic devices at various temperatures.


2019 ◽  
Vol 522 ◽  
pp. 91-98 ◽  
Author(s):  
Tong-Tong Zhang ◽  
Xiang-Dong Gao ◽  
Yong-Qing Wu ◽  
Jing-Nan Yang ◽  
Xiao-Min Li

2017 ◽  
Vol 49 (2) ◽  
pp. 167-174 ◽  
Author(s):  
Milica Petrovic ◽  
Martina Gilic ◽  
Jovana Cirkovic ◽  
Maja Romcevic ◽  
Nebojsa Romcevic ◽  
...  

Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
M. Acosta ◽  
I. Riech ◽  
E. Martín-Tovar

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.


2008 ◽  
Vol 516 (7) ◽  
pp. 1359-1364 ◽  
Author(s):  
E. Elangovan ◽  
A. Marques ◽  
A.S. Viana ◽  
R. Martins ◽  
E. Fortunato

2010 ◽  
Vol 25 (12) ◽  
pp. 2426-2429 ◽  
Author(s):  
Guangjun Wang ◽  
Gang Cheng ◽  
Binbin Hu ◽  
Xiaoli Wang ◽  
Shaoming Wan ◽  
...  

In this paper, polycrystalline CuIn(SxSe1–x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1–x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1–x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.


2016 ◽  
Vol 45 (6) ◽  
pp. 2789-2795 ◽  
Author(s):  
Dhaval Vankhade ◽  
Anjana Kothari ◽  
Tapas K. Chaudhuri
Keyword(s):  
Band Gap ◽  

2019 ◽  
Vol 37 (1) ◽  
pp. 25-32
Author(s):  
A.K. Sharma ◽  
S.S. Potdar ◽  
M.A. Yewale ◽  
Deepak B. Shirgaonkar ◽  
K.S. Pakhare ◽  
...  

AbstractCadmium oxide (CdO) thin films were synthesized using chemical bath deposition (CBD) method from aqueous cadmium nitrate solution. The bath temperatures were maintained at room temperature (25 °C) and at higher temperature (80 °C). The structural studies revealed that the films showed mixed phases of CdO and Cd(OH)2 with hexagonal/monoclinic crystal structure. Annealing treatment removed the hydroxide phase and the films converted into pure CdO with cubic, face centered crystal structure. SEM micrographs of as-deposited films revealed nanowire-like morphology for room temperature deposited films while nanorod-like morphology for high temperature deposited films. However, cube-like morphology was observed after air annealing. Elemental composition was confirmed by EDAX analysis. Band gap energies of the as-deposited films varied over the range of 3 eV to 3.5 eV, whereas the annealed films showed band gap energy variation in the range of 2.2 eV to 2.4 eV. The annealed films were successfully investigated for NH3 sensing at different operating temperatures and at different gas concentrations. The room temperature synthesized film showed a response of 17.3 %, whereas high temperature synthesized film showed a response of 13.5 % at 623 K upon exposure to 24 ppm of NH3.


2013 ◽  
Vol 102 (10) ◽  
pp. 102112 ◽  
Author(s):  
X. L. Wang ◽  
C. Y. Luan ◽  
Q. Shao ◽  
A. Pruna ◽  
C. W. Leung ◽  
...  

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