Fabrication of Ge quantum dots doped TiO2 films with high optical absorption properties via layer-by-layer ion-beam sputtering

2012 ◽  
Vol 67 (1) ◽  
pp. 369-372 ◽  
Author(s):  
Xiaoqing Li ◽  
Fang He ◽  
Guigao Liu ◽  
Yuan Huang ◽  
Chengfu Pan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Absorption ◽  
Ion Beam ◽  
Layer By Layer ◽  
Tio2 Films ◽  
Ion Beam Sputtering ◽  
Absorption Properties ◽  
Doped Tio2 ◽  
Beam Sputtering ◽  
High Optical Absorption

scholarly journals Quantum Dots: An Emerging Approach for Cancer Therapy

2022 ◽  
Vol 8 ◽  
Author(s):  
Sheetal Devi ◽  
Manish Kumar ◽  
Abhishek Tiwari ◽  
Varsha Tiwari ◽  
Deepak Kaushik ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Atomic Layer ◽  
Present Review ◽  
Layer By Layer ◽  
Ion Beam Sputtering ◽  
Photodynamic Treatment ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Fundamental Insight

Nanotechnology is indisputably a scientific technique that offers the prospect of new therapies, and hope, for the treatment of malignant illnesses. It is a novel technology that offers new approaches for the diagnosis and management of diverse diseases. Although the discovery of Quantum dots (QD) nano-transporters has already led to a few positive developments, QD nano-transporters are still at their initial stage, though have yet proven valuable to society. The excertion of QD indicates conversion in natural imaging along with photograph have established incredible suitability in bio-imaging, new drug development, targeted gene deliverance, biosensing, photodynamic treatment as well as diagnosis. The present review aimed to confer the significance of QD in diagnosis as well as in management of cancer. This review aims to impart fundamental insight as well as conception of QD its merits, properties, utilization as well as mode of action. This review highlight of different designing schemes of QD like hydrothermal, drop-casting, ultrasonic, solvothermal, spin-coating, atomic layer desorption, layer by layer, polymethylmethacrylate aided-transfer, electrochemical, ion beam sputtering deposition. Moreover, we have elaborated on the diverse researches related to cytotoxic examination to reveal that QDs are harmless. Concisely, the present review summarizes the fabrication schemes, current research and utilization of QD in cancer treatment.

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Nitrogen-Doped TiO2 Films Prepared by Reactive-Ion-Beam Sputtering with Various NH3/O2 Gas Mixture Ratios

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 47 ◽  
Author(s):  
Jin-Cherng Hsu ◽  
Yung-Hsin Lin ◽  
Paul W. Wang
Keyword(s):  
Ion Beam ◽  
Photoelectron Spectra ◽  
Gas Mixture ◽  
Tio2 Films ◽  
Ion Beam Sputtering ◽  
Amorphous Films ◽  
Doped Tio2 ◽  
X Ray ◽  
Nitrogen Doped ◽  
Beam Sputtering

Nitrogen-doped TiO2 films were prepared by reactive ion-beam sputtering deposition (IBSD) in a mixed atmosphere of NH3 and O2 at a substrate temperature of 400 °C. X-ray photoelectron spectra revealed the presence of six ions, i.e., N3−, N2−, N1−, N+, N2+, and N3+, respectively, in the films. The amorphous films had complex, randomly oriented chemical bonds. The Tauc–Lorentz model was employed to determine the bandgap energy of the amorphous films prepared using different NH3/O2 gas mixing ratios by ellipsometry. In addition, the optical constants of the films were measured. With the increase in the NH3/O2 gas mixture ratio to 3.0, the bandgap of N-doped TiO2 narrowed to ~2.54 eV.

Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition by Ion Beam Sputtering

1993 ◽  
pp. 849-852
Author(s):  
Hiroyuki Ota ◽  
Shinji Migita ◽  
Hiroshi Otera ◽  
Jun-Ichi Ito ◽  
Kazuo Sakai ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Atomic Layer ◽  
Type Structure ◽  
Layer By Layer ◽  
Ion Beam Sputtering ◽  
Layer Deposition ◽  
Beam Sputtering

Effects of Si Spacer-Layer on the Structure of Ge/Si Quantum Dots Bilayers Grown by Ion Beam Sputtering

2013 ◽  
Vol 873 ◽  
pp. 479-485
Author(s):  
Xi Zhou ◽  
Chong Wang ◽  
Jie Yang ◽  
Ying Xia Jin ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Double Layer ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Si Quantum Dot ◽  
Spacer Layer ◽  
Beam Sputtering ◽  
Factor Interactions ◽  
Si Quantum Dots

A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates. The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique. The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers. In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears. When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands. The mechanism of three-factor-interactions of nanoislands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.

scholarly journals Underlying strain-induced growth of the self-assembled Ge quantum-dots prepared by ion beam sputtering deposition

2012 ◽  
Vol 61 (1) ◽  
pp. 016804
Author(s):  
Yang Jie ◽  
Wang Chong ◽  
Jin Ying-Xia ◽  
Li Liang ◽  
Tao Dong-ping ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
The Self ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Ge Quantum Dots ◽  
Self Assembled

scholarly journals Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering

2011 ◽  
Vol 60 (9) ◽  
pp. 096101
Author(s):  
Zhang Xue-Gui ◽  
Wang Chong ◽  
Lu Zhi-Quan ◽  
Yang Jie ◽  
Li Liang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Si Quantum Dots

scholarly journals Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

2017 ◽  
Vol 8 ◽  
pp. 12-20 ◽  
Author(s):  
Sergei N Chebotarev ◽  
Alexander S Pashchenko ◽  
Leonid S Lunin ◽  
Elena N Zhivotova ◽  
Georgy A Erimeev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Beam Current ◽  
Growth Direction ◽  
Ion Beam Sputtering ◽  
Inas Quantum Dots ◽  
Spacer Layer ◽  
Gaas Barrier ◽  
Beam Sputtering ◽  
Impurity Doping

The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm−2 are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·1018 cm−3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots.

scholarly journals Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
S. N. Chebotarev ◽  
A. S. Pashchenko ◽  
V. A. Irkha ◽  
M. L. Lunina
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Beam Current ◽  
High Dispersion ◽  
Ion Beam Sputtering ◽  
Inas Quantum Dots ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Very High ◽  
A Current

A new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of 150 eV leads to an expansion of average sizes of InAshut-quantum dots. According to atomic force and electron microscopy, photoluminescence, and capacity-voltage measurements it was found that an increase of ion-beam current from 60 to 120 μA at a temperature of 500°C and energy of 150 eV slightly enlarges the average sizes of quantum dots from 15 nm to 18 nm while their dispersion is about 30%. At a current of 180 μA a surface density is1.3·1011 cm−2, but under these conditions there is a very high dispersion of quantum dots up to 50%.

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