Materials selection for thin films for radio frequency microelectromechanical systems

2007 ◽  
Vol 28 (6) ◽  
pp. 1994-1997 ◽  
Author(s):  
G. Guisbiers ◽  
O. Van Overschelde ◽  
M. Wautelet
1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


Solar Energy ◽  
2019 ◽  
Vol 194 ◽  
pp. 716-723
Author(s):  
Alapan Dutta ◽  
Ranveer Singh ◽  
Sanjeev Kumar Srivastava ◽  
Tapobrata Som

2002 ◽  
Vol 92 (1) ◽  
pp. 310-319 ◽  
Author(s):  
David L. Young ◽  
Helio Moutinho ◽  
Yanfa Yan ◽  
Timothy J. Coutts

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2765-2768 ◽  
Author(s):  
Shogo Ishizuka ◽  
Shinya Kato ◽  
Takahiro Maruyama ◽  
Katsuhiro Akimoto

Sign in / Sign up

Export Citation Format

Share Document