Lead-free 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 thin films with enhanced electric properties fabricated from optimized sol-gel systems

2017 ◽  
Vol 186 ◽  
pp. 528-533 ◽  
Author(s):  
Zengmei Wang ◽  
Zhonglan Cai ◽  
Huanhuan Wang ◽  
Zhenxiang Cheng ◽  
Jian Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Electric Properties ◽  
Lead Free

scholarly journals Microstructure and electric properties of BCZT thin films with seed layers

RSC Advances ◽  
2017 ◽  
Vol 7 (79) ◽  
pp. 49962-49968 ◽  
Author(s):  
Xin Jiang ◽  
Dan Wang ◽  
Mingze Sun ◽  
Ningjing Zheng ◽  
Shengwei Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Processing Technique ◽  
Electric Properties ◽  
Lead Free ◽  
Gel Processing ◽  
Seed Layers

Lead free Ba0.99Ca0.01Ti0.98Zr0.02O3 (BCZT) thin films with seed layers were prepared by using sol–gel processing technique.

Composition Dependence of Crystallinity for Lead-Free (Li, Na, K)NbO3Powder and Thin Films Fabricated by Sol-Gel Process

2007 ◽  
Vol 358 (1) ◽  
pp. 175-180 ◽  
Author(s):  
Kiyotaka Tanaka ◽  
Ken-Ichi Kakimoto ◽  
Hitoshi Ohsato ◽  
Takashi Iijima
Keyword(s):  
Thin Films ◽  
Composition Dependence ◽  
Sol Gel ◽  
Lead Free ◽  
Sol Gel Process

Electric Properties of PZTN (65/35/x) Thin Films Deposited by Sol-Gel

2003 ◽  
Vol 293 (1) ◽  
pp. 135-143
Author(s):  
M. Pereira ◽  
I. Boerasu ◽  
M. J. M. Gomes ◽  
B. Watts ◽  
F. Leccabue
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Electric Properties

Electric Properties of PZTN (6535x) Thin Films Deposited by Sol-Gel

2003 ◽  
Vol 293 ◽  
pp. 135-143
Author(s):  
M. Pereira ◽  
I. Boerasu ◽  
M. J. M. Gomes ◽  
B. Watts ◽  
F. Leccabue
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Electric Properties

Composition dependence of phase structure and electrical properties of BiMnO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (77) ◽  
pp. 62713-62718 ◽  
Author(s):  
Peng Li ◽  
Wei Li ◽  
Jiwei Zhai ◽  
Bo Shen ◽  
Huarong Zeng ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Phase Structure ◽  
Composition Dependence ◽  
Sol Gel ◽  
Lead Free ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates

Lead-free (1 − x)Bi0.5(Na0.8K0.2)0.5TiO3-xBiMnO3 (BNKT-xBMO, 0 < x < 0.025) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol–gel method, and the effects of BiMnO3 addition on the crystal structure and electrical properties were systematically investigated.

Lead-Free Oxide Thin Films for Gas Detection

2013 ◽  
Vol 789 ◽  
pp. 105-111 ◽  
Author(s):  
Didier Fasquelle ◽  
S. Députier ◽  
M. Mascot ◽  
N. Uschanoff ◽  
V. Bouquet ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
First Generation ◽  
Sol Gel ◽  
Film Surface ◽  
Lead Free ◽  
Zno Films ◽  
First Year ◽  
Average Size ◽  
Different Gases

In view to develop gas sensors, a first generation of lead-free thin films was deposited by different techniques on commercial Si and Al2O3 substrates. During our research project, the correlation between the micro structure of films, the structure of the embedded sensors and the applied temperature range, is being studied. In the first year, doped and undoped BaTiO3, KNbO3 and ZnO thin films have been deposited by sol-gel and PLD techniques. BT and BST films have shown a polycrystalline structure with very fine and regular grains, while disoriented grains with an average size ranging from 50 to 200 nm were observed on the KNbO3 film surface, and ZnO films exhibited a columnar growth. All films were characterized and finally embedded to make semiconductor gas sensors which have been tested under different gases. In this first generation of sensors, ZnO sensors have shown encouraging preliminary results under CO and H2S gases. Keywords : thin films, lead-free oxide, sensor, gas.

scholarly journals Preparation and Microstructure of acetate-based lead-free BSZT ferrolectric thin films using sol-gel technique

2019 ◽  
Vol 35 (1) ◽  
Author(s):  
Vu Thu Hien
Keyword(s):  
Thin Films ◽  
Conduction Mechanism ◽  
Lattice Structure ◽  
Sol Gel ◽  
Lead Free ◽  
Crystalline Lattice ◽  
Plane Symmetry ◽  
X Ray ◽  
Gel Technique ◽  
Current Behaviour

(Ba0.85Sr0.15)(Ti0.9Zr0.1)O3 (BSZT) lead-free ferroelectric thin films at the vicinity of the morphotropic phase boundary (MPB) were successfully deposited on Pt/Ti/SiO2/Si using a modified spin-coated sol-gel method. Microstructure and electrical properties of the thin film were studied. High resolution synchrotron X–ray powder diffraction (SXRD) combinied with Rietveld refinement revealed the samples crystalize in tetragonal perovskite structure with in-plane symmetry (c < a). Raman spectra also confirmed a tetragonal perovskite crystalline lattice structure. Polarisation studies demonstrate that BSZT films exhibit a rather high saturation polarisation of 22.25 µC cm−2. Leakage current behaviour was obtained and possible conduction mechanism is discussed.

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