A modeled perovskite solar cell structure with a Cu2O hole-transporting layer enabling over 20% efficiency by low-cost low-temperature processing

2019 ◽  
Vol 124 ◽  
pp. 205-211 ◽  
Author(s):  
Lingyan Lin ◽  
Linqin Jiang ◽  
Ping Li ◽  
Baodian Fan ◽  
Yu Qiu
2016 ◽  
Vol 102 ◽  
pp. 11-18 ◽  
Author(s):  
P.M. Kaminski ◽  
P.J.M. Isherwood ◽  
G. Womack ◽  
J.M. Walls

RSC Advances ◽  
2015 ◽  
Vol 5 (109) ◽  
pp. 89635-89643 ◽  
Author(s):  
Priyanka U. Londhe ◽  
Ashwini B. Rohom ◽  
Nandu B. Chaure

Highly crystalline and stoichiometric CIS thin films have been electrodeposited from non-aqueous bath at temperature 130 °C. Superstrate solar cell structure (FTO/CdS/CIS/Au) exhibited 4.5% power conversion efficiency.


2020 ◽  
Vol 268 ◽  
pp. 116495
Author(s):  
Salah Khalil ◽  
Mehdi Souli ◽  
Marwa Ennouri ◽  
Helmi Tazerki ◽  
JamelEddine Khiari ◽  
...  

2020 ◽  
pp. 208-215
Author(s):  
Hongwei Zhu ◽  
Zhongjin Shen ◽  
Linfeng Pan ◽  
Jianlei Han ◽  
Felix T. Eickemeyer ◽  
...  

2018 ◽  
Vol 42 (9) ◽  
pp. 7332-7339 ◽  
Author(s):  
Venkatesan Govindan ◽  
Kai-Cheng Yang ◽  
Yung-Sheng Fu ◽  
Chun-Guey Wu

The new spirobased PSC used HTM SFX-TPAM with good photovoltaic performance was prepared through low cost facile route.


2020 ◽  
Vol 13 (12) ◽  
pp. 4854-4861
Author(s):  
Jaehoon Chung ◽  
Seong Sik Shin ◽  
Kyeongil Hwang ◽  
Geunjin Kim ◽  
Ki Woong Kim ◽  
...  

Porous planar structure, as a new concept of low temperature processing ETL, enables to achieve unprecedented PCE in flexible unit cells and large area modules.


Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1508
Author(s):  
Ana C. Piñón Reyes ◽  
Roberto C. Ambrosio Lázaro ◽  
Karim Monfil Leyva ◽  
José A. Luna López ◽  
Javier Flores Méndez ◽  
...  

In this paper, a n-i-p planar heterojunction simulation of Sn-based iodide perovskite solar cell (PSC) is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO2) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CH3NH3SnI3 (MASnI3) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material. Finally, gold (Au) is placed as a back contact. The lead-free perovskite solar cell was simulated using a Solar Cell Capacitance Simulator (SCAPS-1D). The simulations were performed under AM 1.5G light illumination and focused on getting the best efficiency of the solar cell proposed. The thickness of MASnI3 and CZTS, band gap of CZTS, operating temperature in the range between 250 K and 350 K, acceptor concentration and defect density of absorber layer were the parameters optimized in the solar cell device. The simulation results indicate that absorber thicknesses of 500 nm and 300 nm for CZTS are appropriate for the solar cell. Further, when optimum values of the acceptor density (NA) and defect density (Nt), 1016 cm−3 and 1014 cm−3, respectively, were used, the best electrical values were obtained: Jsc of 31.66 mA/cm2, Voc of 0.96 V, FF of 67% and PCE of 20.28%. Due to the enhanced performance parameters, the structure of the device could be used in applications for a solar energy harvesting system.


Author(s):  
Gagandeep Kundu ◽  
Mukhtiyar Singh ◽  
Ramesh Kumar ◽  
Ramesh Kumar ◽  
Vinamrita Singh ◽  
...  

Abstract Simulation studies have been carried out for n-i-p perovskite solar cell (PSC) structure i.e. ITO/SnO2/CH3NH3PbI3/CuInS2/Au. We have considered this cell as our primary structure and is simulated using Solar Cell Capacitance Simulator (SCAPS-1D) software. Here, the CuInS2 quantum dot acts as an inorganic hole transporting layer. Further, the use of the CuInS2 quantum dot in PSCs has been explored by simulating twenty different cell structures. These perovskite solar cells are based on recently used absorber layers, i.e., MASnI3, FAPbI3, and (FAPbI3)0.97(MAPbBr1.5Cl1.5)0.03, and electron transporting layers, i.e., SnO2, TiO2, ZnO, C60, and IGZO. The performance of all structures has been optimized by varying the thickness of the absorber layers and ETLs. The cell structure, ITO/SnO2/CH3NH3SnI3/CuInS2/Au, has been found to exhibit highest power conversion efficiency of 21.79% as compared to other cells. Investigations have also been carried out to analyze the effect of defect density in the absorber layer and the interface of the cell structure. In addition, the cell performance has been ascertained by examining the impact of operating temperature, metal contact work function and that of resistance in series as well as in parallel. The simulation results of our primary cell structure are found to be in good agreement with the recent experimental study.


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