Phonon dispersion and Raman spectra of wurtzite InAs under pressure

2015 ◽  
Vol 83 ◽  
pp. 70-74 ◽  
Author(s):  
Shweta D. Dabhi ◽  
Prafulla K. Jha
Author(s):  
Linxin He ◽  
Xinxin Li ◽  
Xin Zhu ◽  
Jianglei Luo ◽  
Zhiqian Chen ◽  
...  

The application of phosphorene and graphane in different photoelectric devices and energy reserves has attracted wide attention. Here, we investigated the Raman spectra, phonon dispersion and vibration modes of four...


2020 ◽  
Vol 101 (20) ◽  
Author(s):  
Dibyendu Dey ◽  
T. Maitra ◽  
U. V. Waghmare ◽  
A. Taraphder

1972 ◽  
Vol 50 (21) ◽  
pp. 2596-2604 ◽  
Author(s):  
J. C. Irwin ◽  
J. LaCombe

Second-order Raman spectra have been obtained from oriented single crystals of ZnSe. The spectra have been interpreted and the results have been used to determine the zone boundary frequencies at the critical points X, L, and W. The resulting set of frequencies are consistent with known polarization selection rules and with a theoretical model. The frequencies in turn serve to determine the parameters in the theoretical model and the resulting model has been used to calculate the phonon dispersion throughout the Brillouin zone, the density of states, and the specific heat. The results are compared to the small amount of experimental data that is available.


2020 ◽  
Vol 20 (12) ◽  
pp. 7522-7529
Author(s):  
Tanmay Mahanta ◽  
Jyoti Shakya ◽  
Tanuja Mohanty

Herein we report the existence of biaxial strain in swift heavy ion irradiated Molybdenum disulfide (Mos2) as confirmed from Raman spectroscopic measurement and computational study. Defect induced external strain modifies the electronic structure and phonon frequency of the material. In this work, chemically exfoliated Mos2 nanosheets have been exposed to 70 MeV Ni+7 ion irradiation from varying fluence. The Raman spectra reveal that the defect induced LA(M) peak (longitudinal acoustic mode of Phonon at M point) evolves linearly with ion fluence, besides that several other new peaks appear and become visible in Raman spectra thus relaxing Raman fundamental selection rule. Theoretically, simulated Phonon dispersion also supports the fact that tensile strain results in the red shifting of the Raman peak position. The increment of the defect induced LA(M) peak intensity with increasing ion fluence could be a measure of defect quantitatively. This study will be beneficial in the application of external strain to engineer properties of Mos2 as well as understanding the degree of strain inside it quantitatively.


1970 ◽  
Vol 52 (9) ◽  
pp. 4369-4379 ◽  
Author(s):  
Enoch W. Small ◽  
Bruno Fanconi ◽  
Warner L. Peticolas

2001 ◽  
Vol 706 ◽  
Author(s):  
R. Saito ◽  
A. Grueneis ◽  
L. G. Cançcado ◽  
M. A. Pimenta ◽  
A. Jorio ◽  
...  

AbstractThe double resonance Raman spectra of the disorder-induced D-band and some other non-zone-center phonon modes are discussed for two-dimensional (2D) graphite and to some extent for single wall carbon nanotubes (SWNTs). The phonon dispersion relations of graphite can be determined using Raman spectroscopy b y measuring the non-zone center Raman phonon frequencies in combination with theoretically determined phonon q-vectors. We report a t of the phonon dispersion relations to experimental Raman spectra which were previously observed but have not y et been assigned to speci c phonon branches. We found that the D-band and the G0-band of 2D graphite consist of, respectively, two and one Raman Lorentzian peaks, while 3D graphite shows two G0-band Lorentzian peaks. The appearance of two G0 peaks in the resonance Raman spectra of SWNTs may come from resonances of one laser line with two di erent van Hov e singularities.


1982 ◽  
Vol 85 (1) ◽  
pp. 297-303 ◽  
Author(s):  
A. D. Bandrauk ◽  
K. D. Truong ◽  
S. Jandl

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