scholarly journals Modeling of lattice constant and their relations with ionic radii and electronegativity of constituting ions of A2XY6 cubic crystals (A=K, Cs, Rb, Tl; X=tetravalent cation, Y=F, Cl, Br, I)

2011 ◽  
Vol 72 (11) ◽  
pp. 1256-1260 ◽  
Author(s):  
M.G. Brik ◽  
I.V. Kityk
Keyword(s):  
Lattice Constant ◽  
Ionic Radii ◽  
Cubic Crystals ◽  
Tetravalent Cation

Prediction of Lattice Constant of A2XY6 Cubic Crystals Using Gene Expression Programming

2020 ◽  
Vol 124 (28) ◽  
pp. 6037-6045 ◽  
Author(s):  
Menad Nait Amar ◽  
Mohammed Abdelfetah Ghriga ◽  
Mohamed El Amine Ben Seghier ◽  
Hocine Ouaer
Keyword(s):  
Gene Expression ◽  
Lattice Constant ◽  
Gene Expression Programming ◽  
Cubic Crystals

Measurement of the Displacement Across a Coincidence Grain Boundary

1977 ◽  
Vol 35 ◽  
pp. 124-125
Author(s):  
J. W. Matthews ◽  
W. M. Stobbs
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Stacking Fault ◽  
The Other ◽  
Measuring Technique ◽  
High Angle ◽  
Twin Boundaries ◽  
Rigid Displacement ◽  
Cubic Crystals ◽  
Lattice Displacement

Many high-angle grain boundaries in cubic crystals are thought to be either coincidence boundaries (1) or coincidence boundaries to which grain boundary dislocations have been added (1,2). Calculations of the arrangement of atoms inside coincidence boundaries suggest that the coincidence lattice will usually not be continuous across a coincidence boundary (3). There will usually be a rigid displacement of the lattice on one side of the boundary relative to that on the other. This displacement gives rise to a stacking fault in the coincidence lattice.Recently, Pond (4) and Smith (5) have measured the lattice displacement at coincidence boundaries in aluminum. We have developed (6) an alternative to the measuring technique used by them, and have used it to find two of the three components of the displacement at {112} lateral twin boundaries in gold. This paper describes our method and presents a brief account of the results we have obtained.

Microtwinning Evidence For The Apparent Five-Fold Symmetry in T2(Al6Li3Cu)

1987 ◽  
Vol 45 ◽  
pp. 24-25
Author(s):  
Kenneth S. Vecchio ◽  
David B. Williams
Keyword(s):  
Stable Equilibrium ◽  
Equilibrium Phase ◽  
Convergent Beam Electron Diffraction ◽  
Icosahedral Structure ◽  
Cubic Crystals ◽  
Icosahedral Phases ◽  
Heat Treated ◽  
Zero Layer ◽  
Convergent Beam ◽  
Zr Alloy

Since the discovery in 1984 by Shechtman et al. of crystals which display apparent five-fold symmetry, extensive effort has been given to establishing a theoretical basis for the existence of icosahedral phases (eg.2.). Several other investigations have been centered on explaining these observations based on twinning of cubic crystals (eg.3.). Recently, the existence of a stable, equilibrium phase T2Al6 Li3Cu) possessing an icosahedral structure has been reported in the Al-Li-Cu system(4-6).In the present study an Al-2.6wt.%Li-l.5wt.%Cu-0.lwt.%Zr alloy was heat treated at 300°C for 100hrs. to produce large T2 precipitates. Convergent Beam Electron Diffraction (CBED) patterns were obtained from two-fold, three-fold, and apparent five-fold axes of T2 particles. Figure 1 shows the five-fold symmetric zero layer CBED pattern obtained from T2 particles.

Atomic structure of stair rod misfit dislocations at the GaAs on Si(100) interface

1990 ◽  
Vol 48 (4) ◽  
pp. 342-343
Author(s):  
D. Gerthsen
Keyword(s):  
Lattice Constant ◽  
Atomic Structure ◽  
Spherical Aberration ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Gaas On Si ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Intersection Line ◽  
Oriented Parallel

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.

Effect of the structural changes on the mechanical properties of the sintered films

2016 ◽  
Vol 12 (1) ◽  
pp. 4141-4144
Author(s):  
Garima Jain
Keyword(s):  
Crystallite Size ◽  
Lattice Constant ◽  
Structural Changes ◽  
Structural Investigation ◽  
Energy Gap ◽  
Lattice Parameter ◽  
Metal Chalcogenides ◽  
Optical Energy Gap ◽  
Tin Telluride ◽  
Physical Quantities

Polycrystalline films of tin telluride were prepared by sintering technique. The structural investigation of the films with different thicknesses enables to determine lattice parameter, crystallite size and strain existing in the films. The XRD traces showed that strain was tensile in nature. The crystallite size increases with thickness while strain decreases. Higher the value of tensile strain, larger is the lattice constant. The optical energy gap shows a descending nature with increasing strain and so with the lattice constant. Such an attempt made to delve into interdependence of basic physical quantities helps to explore the properties of SnTe and utilize it as an alternative to heavy metal chalcogenides in various technological applications.  

MISORIENTATION DISTRIBUTION FUNCTION FOR CUBIC CRYSTALS

2019 ◽  
Vol 85 (5) ◽  
pp. 28-32
Author(s):  
A. S. Kolyanova ◽  
Y. N. Yaltsev
Keyword(s):  
Distribution Function ◽  
Grain Boundaries ◽  
Orientation Distribution ◽  
Recrystallization Annealing ◽  
Misorientation Distribution ◽  
Cubic Crystals ◽  
Special Boundaries ◽  
Pole Figures ◽  
Two Samples ◽  
Euler Space

A calculation method for obtaining the misorientation distribution function (MDF) for cubic crystals which can be used to estimate the presence or absence of special boundaries in the materials is presented. The calculation was carried out for two samples of Al-Mg-Si alloy subjected to various mechanical and thermal treatments: the first sample is subjected to rolling; the second sample is subjected to recrystallization annealing. MDF is calculated for each sample; the results are presented in the Euler space and in the angle-axis space. The novelty of the method consists in the possibility of gaining data on the grain boundaries from X-ray texture analysis without using electron microscopy. A calculation involving only mathematical operations on matrices was performed on the basis of the orientation distribution function restored from incomplete pole figures. It is shown that no special boundaries are observed in the deformed sample, whereas in the recrystallized alloy, special boundaries are detected at Ʃ = 23, 13, and 17. The shortcoming of the proposed method can be attributed to the lack of accurate data on grain boundaries, since all possible orientation in the polycrystal should be taken into account in MDF calculation.

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