Development of a comprehensive design tool for non-stoichiometric compound thin film solar cells: Calculations of the opto-electrical properties of multinary alloy and optimization of the cell performance

2005 ◽  
Vol 66 (11) ◽  
pp. 1908-1914 ◽  
Author(s):  
H.L. Hwang ◽  
H.H. Chang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Design Tool ◽  
Cell Performance ◽  
Thin Film Solar Cells ◽  
Stoichiometric Compound

Electrical Properties of RF Sputtered CdTe/CdS Thin Film Solar Cells

2009 ◽  
Vol 2 (1) ◽  
pp. 110-112 ◽  
Author(s):  
Sheeja Krishnan ◽  
Ganesh Sanjeev ◽  
Manjunatha Pattabi ◽  
X. Mathew
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Thin Film Solar Cells ◽  
Cds Thin Film

First-principles Study of Back Contact Effects on CdTe Thin Film Solar Cells

2010 ◽  
Vol 1268 ◽  
Author(s):  
Mao-Hua Du
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
First Principles ◽  
Cell Performance ◽  
Thin Film Solar Cells ◽  
Back Contact ◽  
Cdte Thin Film ◽  
Solar Cell Performance ◽  
Cdte Solar Cells ◽  
P Type

AbstractForming a chemically stable low-resistance back contact for CdTe thin film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back contact material, Sb2Te3, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb2Te3 back contacts.

Effects of Mo back-contact annealing on surface potential and carrier transport in Cu2ZnSnS4 thin film solar cells

RSC Advances ◽  
2016 ◽  
Vol 6 (105) ◽  
pp. 103337-103345 ◽  
Author(s):  
Juran Kim ◽  
Gee Yeong Kim ◽  
William Jo ◽  
Kee-Jeong Yang ◽  
Jun-Hyoung Sim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Surface Potential ◽  
Carrier Transport ◽  
Annealing Temperature ◽  
Thin Film Solar Cells ◽  
Device Performance ◽  
Back Contact ◽  
Cu2znsns4 Thin Film

Mo annealing temperature of 500 °C enhances the electrical properties of CZTS absorber, leading to better device performance.

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