Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory

K.S. Kim; K.H. Shin; S.H. Lim

doi:10.1016/j.jmmm.2006.07.014

Effects of induced anisotropy on the bit stability and switching field in magnetic random access memory

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2006.07.014 ◽

2007 ◽

Vol 309 (2) ◽

pp. 326-332 ◽

Cited By ~ 1

Author(s):

K.S. Kim ◽

K.H. Shin ◽

S.H. Lim

Keyword(s):

Random Access ◽

Random Access Memory ◽

Induced Anisotropy ◽

Switching Field ◽

Access Memory ◽

Magnetic Random Access Memory

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Materials and devices for reduced switching field toggle magnetic random access memory

Journal of Applied Physics ◽

10.1063/1.2353272 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074506 ◽

Cited By ~ 12

Author(s):

D. C. Worledge ◽

P. L. Trouilloud ◽

M. C. Gaidis ◽

Y. Lu ◽

D. W. Abraham ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Switching Field ◽

Access Memory ◽

Magnetic Random Access Memory

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Reduction of switching field in spin-flop switching for high-density magnetic random access memory

Journal of Applied Physics ◽

10.1063/1.2150597 ◽

2006 ◽

Vol 99 (1) ◽

pp. 014502 ◽

Cited By ~ 3

Author(s):

K. S. Kim ◽

K. H. Shin ◽

S. H. Lim

Keyword(s):

Random Access ◽

Random Access Memory ◽

High Density ◽

Switching Field ◽

Access Memory ◽

Magnetic Random Access Memory

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Micromagnetic study on write operation in submicron magnetic random access memory cell

Journal of Applied Physics ◽

10.1063/1.361912 ◽

1996 ◽

Vol 79 (8) ◽

pp. 6646 ◽

Cited By ~ 3

Author(s):

H. Asada ◽

K. Matsuyama ◽

K. Taniguchi

Keyword(s):

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Access Memory ◽

Magnetic Random Access Memory

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Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

Physical Review Applied ◽

10.1103/physrevapplied.15.064015 ◽

2021 ◽

Vol 15 (6) ◽

Author(s):

Y.C. Wu ◽

K. Garello ◽

W. Kim ◽

M. Gupta ◽

M. Perumkunnil ◽

...

Keyword(s):

Low Power ◽

Random Access ◽

Random Access Memory ◽

High Density ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Embedded Applications ◽

Voltage Gate

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Union Bound Analysis for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) with Channel Quantization

IEEE Transactions on Magnetics ◽

10.1109/tmag.2021.3084210 ◽

2021 ◽

pp. 1-1

Author(s):

Xingwei Zhong ◽

Kui Cai ◽

Guanghui Song

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer ◽

Channel Quantization ◽

Union Bound ◽

Bound Analysis

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Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory

Physical Review Applied ◽

10.1103/physrevapplied.15.024063 ◽

2021 ◽

Vol 15 (2) ◽

Author(s):

Rahul Mishra ◽

Taehwan Kim ◽

Jongsun Park ◽

Hyunsoo Yang

Keyword(s):

Random Access ◽

Random Access Memory ◽

High Density ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory

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Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320730 ◽

2019 ◽

Author(s):

Xiang Li ◽

Shy-Jay Lin ◽

DC Mahendra ◽

Yu-Ching Liao ◽

Chengyang Yao ◽

...

Keyword(s):

Low Power ◽

High Speed ◽

Random Access ◽

Random Access Memory ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory

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Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory

2021 IEEE International Symposium on Circuits and Systems (ISCAS) ◽

10.1109/iscas51556.2021.9401294 ◽

2021 ◽

Author(s):

Deming Zhang ◽

Xian Wang ◽

Kaili Zhang ◽

Lang Zeng ◽

You Wang ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Single Event ◽

Access Memory ◽

Magnetic Random Access Memory

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An Optimized Resistance Characterization Technique for the Next Generation Magnetic Random Access Memory

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2015.2415524 ◽

2015 ◽

Vol 14 (3) ◽

pp. 540-545 ◽

Cited By ~ 2

Author(s):

Fei Li ◽

Sunny Yan Hwee Lua ◽

Aarthy Mani

Keyword(s):

Random Access ◽

Random Access Memory ◽

Next Generation ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Characterization Technique

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L-shape electrode design for high-density spin-orbit torque magnetic random access memory with perpendicular shape anisotropy

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/abf61d ◽

2021 ◽

Author(s):

Kequn Chi ◽

Yinuo Shi ◽

Zhou Li ◽

Wenbiao Zhang ◽

Yun Xing ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Shape Anisotropy ◽

High Density ◽

Electrode Design ◽

Spin Orbit ◽

Access Memory ◽

Magnetic Random Access Memory

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