The effect of annealing temperature on the luminescence properties of Y2O3 phosphor powders doped with a high concentration of Bi3+

2016 ◽  
Vol 180 ◽  
pp. 198-203 ◽  
Author(s):  
R.M. Jafer ◽  
H.C. Swart ◽  
A. Yousif ◽  
Vinod Kumar ◽  
E. Coetsee
Keyword(s):  
Annealing Temperature ◽  
Luminescence Properties ◽  
High Concentration

Effect of annealing temperature on luminescence properties of ZnWO 4 :Eu 3+ nanophosphor

2019 ◽  
Vol 14 (5) ◽  
pp. 496-500 ◽  
Author(s):  
Chunyang Li ◽  
Xiaodi Du ◽  
Yurong Shi ◽  
Zhenling Wang
Keyword(s):  
Annealing Temperature ◽  
Luminescence Properties

Synthesis and luminescence properties of a H2annealed Mn-doped Y3Al5O12:Ce3+single crystal for WLEDs

CrystEngComm ◽  
2015 ◽  
Vol 17 (24) ◽  
pp. 4554-4561 ◽  
Author(s):  
Guorui Gu ◽  
Weidong Xiang ◽  
Cheng Yang ◽  
Xiaojuan Liang
Keyword(s):  
Single Crystal ◽  
Emission Intensity ◽  
Annealing Temperature ◽  
Luminescence Properties ◽  
Blue Led ◽  
Grown Sample ◽  
Orange Region ◽  
Yellow Orange ◽  
Mn Doped

Compared to the blue LED chip and the as-grown sample, upon increasing the annealing temperature, the emission intensity in the yellow-orange region is enhanced and reaches the highest at 1550 °C.

Structural and Luminescence Properties of Nanocrystalline Eu3+-doped Gd2O3

2008 ◽  
Vol 1074 ◽  
Author(s):  
Segundo Jauregui ◽  
Oscar Perales-Perez ◽  
Omar Vasquez ◽  
W. Jia ◽  
M. S. Tomar ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Luminescence Properties ◽  
Atomic Fraction ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Species Being

ABSTRACTThe present work addresses the synthesis and characterization of red emitting Gd2-xEuxO3 nanocrystalline phosphors by a modified sol-gel based method. The effects of the annealing temperature and atomic fraction of Eu3+ ions, ‘x’, on the structural and luminescence properties of the produced oxides have been systematically investigated. X-ray diffraction analyses revealed that crystalline cubic-Gd2O3 host structure was obtained when the intermediates (x=0.01-0.30) were annealed at different temperatures in air. Photoluminescence spectra of doped Gd2O3 powders showed all transitions of Eu3+ species, being the 5D0→7F2 transition the most intense. On a common sample-weight basis, the highest photoluminescence intensity was obtained at ‘x’ = 0.15. The energy transfer from host to dopant was verified for all evaluated ‘x’ values, which suggest the actual incorporation of Eu species into the Gd-oxide lattice. It was also found that the photoluminescence intensity was strongly dependent on the annealing temperature and dopant concentration.

Effect of doping concentration and annealing temperature on luminescence properties of Y2O3:Eu3+ nanophosphor prepared by colloidal precipitation method

2012 ◽  
Vol 132 (8) ◽  
pp. 2023-2029 ◽  
Author(s):  
G. Siddaramana Gowd ◽  
Manoj Kumar Patra ◽  
Sandhya Songara ◽  
Anuj Shukla ◽  
Manoth Mathew ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Annealing Temperature ◽  
Luminescence Properties ◽  
Precipitation Method ◽  
Effect Of Doping

Incorporation of Highly Concentrated Iron Impurities in InP by High Temperature Ion Implantation

2002 ◽  
Vol 719 ◽  
Author(s):  
T. Cesca ◽  
A. Gasparotto ◽  
N. El Habra ◽  
A. Coati ◽  
B. Fraboni ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Deep Level ◽  
Thermal Treatments ◽  
High Concentration ◽  
X Ray ◽  
Lattice Position ◽  
Defect Reactions ◽  
High Fraction ◽  
Substitutional Fe

AbstractIron was introduced in InP by ion implantation with the aim of obtaining a high concentration of substitutional, electrically active, deep level impurities. A substrate temperature higher than 200 °C was maintained during implantation in order to reduce damage accumulation and Fe defect reactions. The lattice position of the implanted Fe atoms and its modification during annealing treatments was studied by means of Proton Induced X-ray Emission (PIXE) in channeling conditions and correlated with the ion induced damage measured by different techniques. The results show that a high fraction of substitutional Fe atoms is present after the implantation. This fraction is progressively reduced during thermal treatments by increasing the annealing temperature, with the formation of inactive Fe aggregates, probably in the form of small Fe-P complexes.

Redistribution and precipitation of dopant on thermal annealing of bismuth implanted silicon

1983 ◽  
Vol 41 ◽  
pp. 126-127
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
O. W. Holland
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Cross Section ◽  
Solid Solutions ◽  
Annealing Temperature ◽  
High Dose ◽  
Extended Defects ◽  
High Concentration ◽  
Equilibrium Solubility ◽  
Original Surface

Ion implantation above a certain dose leads to the formation of amorphous layers, which if recrystallized under interface-controlled growth at 450-600°C, result in solid solutions far exceeding the equilibrium solubility limits. In this investigation, we have annealed high-dose implanted specimens at 1000°C for one hour to study the redistribution and precipitation of dopant due to the presence of extended defects.Figure 1 shows a cross section TEM image taken near the [01] Si pole of (100)Si implanted with 209Bi+ (250 KeV, 5 x 1015 cm−2) and annealed (1000°C, 1 hr). As well as a band of precipitates typically 5 nm in size centered at a depth of 100 nm there are some much larger precipitates (28 nm in size) at the original surface of the silicon. These show a curved meniscus protruding out of the surface since the bismuth is liquid at the annealing temperature. These precipitates are located on twins suggesting that the dopant has diffused along the twin boundaries from the band of high concentration to the surface.

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