Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot

2013 ◽  
Vol 135 ◽  
pp. 271-275 ◽  
Author(s):  
L. Bouzaïene ◽  
R. Ben Mahrsia ◽  
M. Baira ◽  
L. Sfaxi ◽  
H. Maaref
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Dot ◽  
Temperature Effects ◽  
Nonlinear Optical ◽  
Optical Rectification ◽  
Gaas Quantum Dot ◽  
Pressure And Temperature Effects ◽  
Nonlinear Optical Rectification

Simultaneous effects of hydrostatic pressure, temperature and aluminum concentration on nonlinear optical rectification, second- and third-harmonic generation in a GaAs/Ga1−xAlxAs morse quantum well

2019 ◽  
Vol 33 (04) ◽  
pp. 1950009 ◽  
Author(s):  
Jun-Sheng Li ◽  
Zhi-Hai Zhang ◽  
You-Wen Liu ◽  
Jian-Hui Yuan
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Harmonic Generation ◽  
Nonlinear Optical ◽  
Great Influence ◽  
Third Harmonic Generation ◽  
Aluminum Concentration ◽  
Optical Rectification ◽  
Third Harmonic ◽  
Nonlinear Optical Rectification

In this work, the simultaneous effects of aluminum concentration, hydrostatic pressure and temperature on the nonlinear optical rectification (OR), second- and third-harmonic generation (SHG and THG) in a GaAs/Ga[Formula: see text]Al[Formula: see text]As morse quantum well (QW) are studied. The expressions of OR, SHG and THG in morse QW were derived with the use of the compact-density-matrix approach and iterative method. The simultaneous effects of aluminum concentration, hydrostatic pressure and temperature on the effective mass have been taken into account. It is found that (1) the presence of the aluminum concentration, hydrostatic pressure and temperature have a great influence on the symmetry of the system, the nonlinear OR, SHG and THG. (2) the variation of the resonant peaks of the OR and SHG shows complicated behavior as the temperature changes. (3) the temperature effect is weaker than the aluminum concentration and hydrostatic pressure effects on the nonlinear OR, SHG and THG. The influences of different parameters of GaAs/Ga[Formula: see text]Al[Formula: see text]As morse QW and applied field strengths on the nonlinear OR, SHG and THG are discussed.

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