The temporal evolution of the structure and luminescence properties of CdSe semiconductor quantum dots grown at low temperatures

2012 ◽  
Vol 132 (9) ◽  
pp. 2447-2451 ◽  
Author(s):  
Waleed E. Mahmoud ◽  
S.J. Yaghmour
2001 ◽  
Vol 696 ◽  
Author(s):  
Peter Möck ◽  
Teya Topuria ◽  
Nigel D. Browning ◽  
Robin J. Nicholas ◽  
Roger G. Booker

AbstractThermodynamic arguments are presented for the formation of atomic order in heteroepitaxially grown semiconductor quantum dots. From thermodynamics several significant properties of these systems can be derived, such as an enhanced critical temperature of the disorder-order transition, the possible co-existence of differently ordered domains of varying size and orientation, the possible existence of structures that have not been observed before in semiconductors, the occurrence of atomic order over time, and the occurrence of short range order when the growth proceeds at low temperatures. Transmission electron microscopy results support these predictions. Finally, we speculate on the cause for the observed increase in life time of (In,Ga)As/GaAs quantum dot lasers [H-Y. Liu et al., Appl. Phys. Lett. 79, 2868 (2001)].


2001 ◽  
Vol 707 ◽  
Author(s):  
Peter Möck ◽  
Teya Topuria ◽  
Nigel D. Browning ◽  
Robin J. Nicholas ◽  
Roger G. Booker

ABSTRACTThermodynamic arguments are presented for the formation of atomic order in heteroepitaxially grown semiconductor quantum dots. From thermodynamics several significant properties of these systems can be derived, such as an enhanced critical temperature of the disorder-order transition, the possible co-existence of differently ordered domains of varying size and orientation, the possible existence of structures that have not been observed before in semiconductors, the occurrence of atomic order over time, and the occurrence of short range order when the growth proceeds at low temperatures. Transmission electron microscopy results support these predictions. Finally, we speculate on the cause for the observed increase in life time of (In,Ga)As/GaAs quantum dot lasers [H-Y. Liu et al., Appl. Phys. Lett. 79, 2868 (2001)].


2019 ◽  
Vol 48 (22) ◽  
pp. 7619-7631 ◽  
Author(s):  
Mohan Singh Mehata ◽  
R. K. Ratnesh

Carrier relaxation processes in CdSe core QDs and core–multi-shell QDs under excitation at 450 nm.


1997 ◽  
Vol 72-74 ◽  
pp. 34-37 ◽  
Author(s):  
D. Bimberg ◽  
N.N. Ledentsov ◽  
M. Grundmann ◽  
R. Heitz ◽  
J. Böhrer ◽  
...  

2003 ◽  
Vol 773 ◽  
Author(s):  
Xiaohu Gao ◽  
Shuming Nie ◽  
Wallace H. Coulter

AbstractLuminescent quantum dots (QDs) are emerging as a new class of biological labels with unique properties and applications that are not available from traditional organic dyes and fluorescent proteins. Here we report new developments in using semiconductor quantum dots for quantitative imaging and spectroscopy of single cancer cells. We show that both live and fixed cells can be labeled with multicolor QDs, and that single cells can be analyzed by fluorescence imaging and wavelength-resolved spectroscopy. These results raise new possibilities in cancer imaging, molecular profiling, and disease staging.


2010 ◽  
Vol 37 (1) ◽  
pp. 103-110 ◽  
Author(s):  
Chang-Yan LI ◽  
Qian LI ◽  
Hai-Tao LIU ◽  
Jun ZHANG ◽  
DAMIRIN Aletangaole

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