scholarly journals Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering

2012 ◽  
Vol 132 (9) ◽  
pp. 2367-2370 ◽  
Author(s):  
H. Rinnert ◽  
S.S. Hussain ◽  
V. Brien ◽  
J. Legrand ◽  
P. Pigeat
2019 ◽  
Vol 37 (3) ◽  
pp. 031503 ◽  
Author(s):  
Tetyana Torchynska ◽  
Brahim El Filali ◽  
Larysa Khomenkova ◽  
Xavier Portier ◽  
Fabrice Gourbilleau

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.


2018 ◽  
Vol 32 (4) ◽  
pp. 1035-1042 ◽  
Author(s):  
K. Sunil Kumar ◽  
M. Ramanadha ◽  
A. Sudharani ◽  
S. Ramu ◽  
R. P. Vijayalakshmi

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