The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared

2012 ◽  
Vol 132 (12) ◽  
pp. 3151-3153 ◽  
Author(s):  
L. Rebohle ◽  
J. Lehmann ◽  
S. Prucnal ◽  
M. Helm ◽  
W. Skorupa
Keyword(s):  
Rare Earth ◽  
Near Infrared ◽  
Light Emitting ◽  
Light Emitting Devices

Rare earth doped Si-rich ZnO for multiband near-infrared light emitting devices

2012 ◽  
Vol 101 (19) ◽  
pp. 191115 ◽  
Author(s):  
Emanuele Francesco Pecora ◽  
Thomas I. Murphy ◽  
Luca Dal Negro
Keyword(s):  
Rare Earth ◽  
Near Infrared ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Rare Earth Doped

Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO2 films

2015 ◽  
Vol 107 (13) ◽  
pp. 131103 ◽  
Author(s):  
Chen Zhu ◽  
Chunyan Lv ◽  
Zhifei Gao ◽  
Canxing Wang ◽  
Dongsheng Li ◽  
...  
Keyword(s):  
Rare Earth ◽  
Near Infrared ◽  
Tio2 Films ◽  
Light Emitting ◽  
Doped Tio2 ◽  
Light Emitting Devices ◽  
Rare Earth Doped

Enhanced Near‐Infrared Perovskite Light‐Emitting Devices by Introducing Choline Chloride Layer

2021 ◽  
pp. 2100636
Author(s):  
Xiaoxiao Xu ◽  
Ke Xiao ◽  
Guozhi Hou ◽  
Yangyi Zhang ◽  
Ting Zhu ◽  
...  
Keyword(s):  
Near Infrared ◽  
Choline Chloride ◽  
Light Emitting ◽  
Light Emitting Devices

Air-processed stable near-infrared Si-based perovskite light-emitting devices with efficiency exceeding 7.5%

2022 ◽  
Author(s):  
Xiaoxiao Xu ◽  
Ke Xiao ◽  
Guozhi Hou ◽  
Yu Zhu ◽  
Ting Zhu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Ambient Air ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Composite Layers

Two composite layers are used to enhance the efficiency of Si-based near-infrared perovskite light-emitting devices, which are produced in ambient air, and the external quantum efficiency increased to 7.5%.

scholarly journals The dark exciton ground state promotes photon-pair emission in individual perovskite nanocrystals

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Philippe Tamarat ◽  
Lei Hou ◽  
Jean-Baptiste Trebbia ◽  
Abhishek Swarnkar ◽  
Louis Biadala ◽  
...  
Keyword(s):  
Near Infrared ◽  
Exciton State ◽  
Lead Iodide ◽  
Electron Hole ◽  
Light Emitting ◽  
Perovskite Nanocrystals ◽  
Light Emitting Devices ◽  
Optical And Electronic Properties ◽  
Wide Range ◽  
Halide Perovskites

AbstractCesium lead halide perovskites exhibit outstanding optical and electronic properties for a wide range of applications in optoelectronics and for light-emitting devices. Yet, the physics of the band-edge exciton, whose recombination is at the origin of the photoluminescence, is not elucidated. Here, we unveil the exciton fine structure of individual cesium lead iodide perovskite nanocrystals and demonstrate that it is governed by the electron-hole exchange interaction and nanocrystal shape anisotropy. The lowest-energy exciton state is a long-lived dark singlet state, which promotes the creation of biexcitons at low temperatures and thus correlated photon pairs. These bright quantum emitters in the near-infrared have a photon statistics that can readily be tuned from bunching to antibunching, using magnetic or thermal coupling between dark and bright exciton sublevels.

New rare-earth quinolinate complexes for organic light-emitting devices

2013 ◽  
Vol 528 ◽  
pp. 36-41 ◽  
Author(s):  
H. Camargo ◽  
T.B. Paolini ◽  
E. Niyama ◽  
H.F. Brito ◽  
M. Cremona
Keyword(s):  
Rare Earth ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices

Red and near-infrared electroluminescence from organic light-emitting devices based on a soluble substituted metal-free phthalocyanine

2009 ◽  
Vol 31 (6) ◽  
pp. 889-894 ◽  
Author(s):  
Zhaoqi Fan ◽  
Chuanhui Cheng ◽  
Shukun Yu ◽  
Kaiqi Ye ◽  
Rensheng Sheng ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Metal Free ◽  
Organic Light ◽  
Organic Light Emitting Devices

Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices

2008 ◽  
Vol 91 (1) ◽  
pp. 123-126 ◽  
Author(s):  
S. Prucnal ◽  
L. Rebohle ◽  
A.N. Nazarov ◽  
I.N. Osiyuk ◽  
I.P. Tjagulskii ◽  
...  
Keyword(s):  
Rare Earth ◽  
Metal Oxide ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Luminescence Centers ◽  
Metal Oxide Silicon ◽  
Ion Implanted
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