Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature

2007 ◽  
Vol 122-123 ◽  
pp. 188-190 ◽  
Author(s):  
Z. Sun ◽  
X.D. Yang ◽  
B.Q. Sun ◽  
Y. Ji ◽  
S.Y. Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Photoluminescence Quenching

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

scholarly journals Mobility Enhancement in Square Quantum Wells: Symmetric Modulation of the Envelop Wave Function

2010 ◽  
Vol 20 (3) ◽  
pp. 193
Author(s):  
Doan Nhat Quang ◽  
Nguyen Huyen Tung ◽  
Nguyen Trung Hong ◽  
Tran Thi Hai
Keyword(s):  
Experimental Data ◽  
Wave Function ◽  
Low Temperature ◽  
Quantum Wells ◽  
Quantum Transport ◽  
Variational Approach ◽  
Theoretical Study ◽  
Recent Experimental Data ◽  
Carrier Distribution ◽  
Analytic Expressions

We present a theoretical study of the effects from symmetric modulation of the envelop wave function on quantum transport in square quantum wells (QWs). Within the variational approach we obtain analytic expressions for the carrier distribution and their scattering in symmetric two-side doped square QWs. Roughness-induced scattering are found significantly weaker than those in the asymmetric one-side doped counterpart. Thus, we propose symmetric modulation of the wave function as an efficient method for enhancement of the roughness-limited QW mobility. Our theory is able to well reproduce the recent experimental data about low-temperature transport of electrons and holes in two-side doped square QWs, e.g., the mobility dependence on the channel width, which have not been explained so far.

Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions

2022 ◽  
Author(s):  
Shawutijiang Sidikejiang ◽  
Philipp Henning ◽  
Philipp Horenburg ◽  
Heiko Bremers ◽  
Uwe Rossow ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Internal Quantum Efficiency ◽  
Structural Defects ◽  
Measured Intensity ◽  
Time Resolved ◽  
Absorbed Power ◽  
Radiative Losses ◽  
Effects Of Temperature ◽  
Excitation Conditions

Abstract We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% IQE in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a ``Reference'', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum
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