scholarly journals Global well-posedness of the two-dimensional incompressible magnetohydrodynamics system with variable density and electrical conductivity

2014 ◽  
Vol 267 (5) ◽  
pp. 1488-1539 ◽  
Author(s):  
Guilong Gui
2021 ◽  
Author(s):  
Tao Li ◽  
Xuefeng Chang ◽  
Lifang Mei ◽  
Xiayun Shu ◽  
Jidong Ma ◽  
...  

Ti3C2Tx is a promising new two-dimensional layered material for supercapacitors with good electrical conductivity and chemical stability. However, Ti3C2Tx has problems such as collapse of the layered structure and low...


Mathematics ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 461
Author(s):  
Kenta Oishi ◽  
Yoshihiro Shibata

In this paper, we consider the motion of incompressible magnetohydrodynamics (MHD) with resistivity in a domain bounded by a free surface. An electromagnetic field generated by some currents in an external domain keeps an MHD flow in a bounded domain. On the free surface, free boundary conditions for MHD flow and transmission conditions for electromagnetic fields are imposed. We proved the local well-posedness in the general setting of domains from a mathematical point of view. The solutions are obtained in an anisotropic space Hp1((0,T),Hq1)∩Lp((0,T),Hq3) for the velocity field and in an anisotropic space Hp1((0,T),Lq)∩Lp((0,T),Hq2) for the magnetic fields with 2<p<∞, N<q<∞ and 2/p+N/q<1. To prove our main result, we used the Lp-Lq maximal regularity theorem for the Stokes equations with free boundary conditions and for the magnetic field equations with transmission conditions, which have been obtained by Frolova and the second author.


2019 ◽  
Vol 1163 ◽  
pp. 012006
Author(s):  
Yuri Yu Tarasevich ◽  
Andrei V Eserkepov ◽  
Irina V Vodolazskaya ◽  
Petr G Selin ◽  
Valentina V Chirkova ◽  
...  

2004 ◽  
Vol 22 (1-3) ◽  
pp. 228-231 ◽  
Author(s):  
J. Zhu ◽  
H.L. Stormer ◽  
L.N. Pfeiffer ◽  
K.W. Baldwin ◽  
K.W. West

2021 ◽  
Author(s):  
Qizhi Xu ◽  
Boyuan Zhang ◽  
Yihang Zeng ◽  
Amirali Zangiabadi ◽  
Hongwei Ni ◽  
...  

Ultrathin porous films held together by non-covalent van der Waals interactions was obtained by a top-down approach, which is then utilized as channel material in a two-dimensional planar field-effect transistor device through easy stamp transfer.


1989 ◽  
Vol 67 (4) ◽  
pp. 212-217 ◽  
Author(s):  
W. Allegretto ◽  
A. Nathan ◽  
K. Chau ◽  
H. P. Baltes

We present results of electrothermal interactions in fine geometry contacts and vias. The results have been obtained using a two-dimensional model based on the finite-box procedure. For the contact geometry, large electric potential gradients and consequently high Joule-heating effects develop at the interface, which is relatively low in electrical conductivity. In the case of the via, however, temperature escalations result from singularities in the electric field at geometrically imperfect locations, owing to inadequate step coverage in the metallization process. In particular, we discuss the treatment of boundary conditions for the temperature equation.


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