Gd2O2S:Eu3+ and Gd2O2S:Eu3+/Gd2O2S hollow microspheres: Solvothermal preparation and luminescence properties

2012 ◽  
Vol 532 ◽  
pp. 34-40 ◽  
Author(s):  
Jing Huang ◽  
Yanhua Song ◽  
Ye Sheng ◽  
Keyan Zheng ◽  
Hongbo Li ◽  
...  
2011 ◽  
Vol 176 (16) ◽  
pp. 1251-1256 ◽  
Author(s):  
Congbing Tan ◽  
Yunxin Liu ◽  
Wenbin Li ◽  
Yutao Zhang ◽  
Yunan Han

2013 ◽  
Vol 91 ◽  
pp. 265-267 ◽  
Author(s):  
Yuehua Fu ◽  
Hongfang Jiu ◽  
Lixin Zhang ◽  
Yixin Sun ◽  
Yuanzhong Wang

RSC Advances ◽  
2014 ◽  
Vol 4 (48) ◽  
pp. 25148-25154 ◽  
Author(s):  
Taiki Ihara ◽  
Hajime Wagata ◽  
Toshihiro Kogure ◽  
Ken-ichi Katsumata ◽  
Kiyoshi Okada ◽  
...  

ZnO hollow microspheres exhibiting only c planes on the surface were successfully synthesized by a solvothermal method even without using a template. The ZnO hollow microspheres are formed by preferential dissolution of centers of ZnO solid microspheres which have low crystallinity.


2011 ◽  
Vol 11 (11) ◽  
pp. 9757-9760 ◽  
Author(s):  
Guixia Liu ◽  
Shujun Liu ◽  
Xiangting Dong ◽  
Jinxian Wang

2013 ◽  
Vol 31 (3) ◽  
pp. 241-246 ◽  
Author(s):  
Zhiping XUE ◽  
Suqing DENG ◽  
Yingliang LIU ◽  
Bingfu LEI ◽  
Yong XIAO ◽  
...  

2011 ◽  
Vol 6 (11) ◽  
pp. 927 ◽  
Author(s):  
Lixin Zhang ◽  
Yixin Sun ◽  
Hongfang Jiu ◽  
Yuanzhong Wang ◽  
Yuehua Fu ◽  
...  

Author(s):  
J W Steeds

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.


2014 ◽  
Vol 9 (2) ◽  
pp. 87-90 ◽  
Author(s):  
Zhi Yuan Wang ◽  
Feng Ping Wang ◽  
Yan Li ◽  
Ming Yan Li ◽  
Muhammad Zubair Iqbal ◽  
...  

2019 ◽  
Vol 14 (5) ◽  
pp. 496-500 ◽  
Author(s):  
Chunyang Li ◽  
Xiaodi Du ◽  
Yurong Shi ◽  
Zhenling Wang

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