Influence of pre-strain on thermal stability of non-equilibrium microstructures in a low alloy steel

2013 ◽  
Vol 577 ◽  
pp. S614-S618
Author(s):  
Chao Sun ◽  
Shanwu Yang ◽  
Xian Wang ◽  
Rui Zhang ◽  
Xinlai He
Keyword(s):  
Thermal Stability ◽  
Alloy Steel ◽  
Low Alloy Steel ◽  
Thermal Stability Of ◽  
Non Equilibrium

scholarly journals Thermal Stability of Retained Austenite and Properties of A Multi-Phase Low Alloy Steel

Metals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 807 ◽  
Author(s):  
Zhenjia Xie ◽  
Lin Xiong ◽  
Gang Han ◽  
Xuelin Wang ◽  
Chengjia Shang
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Alloy Steel ◽  
Retained Austenite ◽  
Mechanical Stability ◽  
Volume Fraction ◽  
Low Carbon ◽  
Low Alloy Steel ◽  
Multi Phase ◽  
Thermal Stability Of

In this work, we elucidate the effects of tempering on the microstructure and properties in a low carbon low alloy steel, with particular emphasis on the thermal stability of retained austenite during high-temperature tempering at 500–700 °C for 1 h. Volume fraction of ~14% of retained austenite was obtained in the studied steel by two-step intercritical heat treatment. Results from transmission electron microscopy (TEM) and X-ray diffraction (XRD) indicated that retained austenite had high thermal stability when tempering at 500 and 600 °C for 1 h. The volume fraction was ~11–12%, the length and width remained ~0.77 and 0.21 μm, and concentration of Mn and Ni in retained austenite remained ~6.2–6.6 and ~1.6 wt %, respectively. However, when tempering at 700 °C for 1 h, the volume fraction of retained austenite was decreased largely to ~8%. The underlying reason could be attributed to the growth of austenite during high-temperature holding, leading to a depletion of alloy contents and a decrease in stability. Moreover, for samples tempered at 700 °C for 1 h, retained austenite rapidly transformed into martensite at a strain of 2–10%, and a dramatic increase in work hardening was observed. This indicated that the mechanical stability of retained austenite decreased.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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