scholarly journals Effects of ternary additions on the microstructure and thermal stability of directionally-solidified MoSi2/Mo5Si3 eutectic composites

2014 ◽  
Vol 52 ◽  
pp. 72-85 ◽  
Author(s):  
Kosuke Fujiwara ◽  
Hirotaka Matsunoshita ◽  
Yuta Sasai ◽  
Kyosuke Kishida ◽  
Haruyuki Inui
Keyword(s):  
Thermal Stability ◽  
Directionally Solidified ◽  
Ternary Additions ◽  
Thermal Stability Of

Effects of Si and C additions on the thermal stability of directionally solidified TiAl–Nb alloys

2005 ◽  
Vol 13 (10) ◽  
pp. 1038-1047 ◽  
Author(s):  
J.H. Kim ◽  
S.W. Kim ◽  
H.N. Lee ◽  
M.H. Oh ◽  
H. Inui ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Directionally Solidified ◽  
Thermal Stability Of

Thermal Stability of Nanocrystalline Grain Size in Ternary Fe-Base Alloys

2013 ◽  
Vol 753 ◽  
pp. 341-344 ◽  
Author(s):  
Carl C. Koch ◽  
Ronald O. Scattergood ◽  
Hasan Kotan ◽  
Mostafa Saber
Keyword(s):  
Thermal Stability ◽  
Grain Size ◽  
Annealing Temperature ◽  
Thermal Stabilization ◽  
Relative Importance ◽  
Ni Alloys ◽  
Thermodynamic Stabilization ◽  
Temperature Ranges ◽  
Ternary Additions ◽  
Thermal Stability Of

We report recent research in our laboratory on the thermal stabilization of nanocrystalline binary alloys with ternary additions. Fe-Cr and Fe-Ni alloys with the ternary addition of Zr are studied. The thermal stability of these nanocrystalline alloys, prepared by mechanical alloying of powders, is studied by XRD, TEM and hardness as a function of annealing temperature. The relative importance of thermodynamic or kinetic stabilization in various temperature ranges is discussed for the different alloys. In agreement with our recent model for thermodynamic stabilization, it is found that Zr solute additions are more effective in stabilizing the nanocrystalline grain size in the Fe-Cr than in the Fe-Ni system.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of
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