In situ synthesis and electrical properties of CuW–La2O3 composites

2012 ◽  
Vol 31 ◽  
pp. 147-151 ◽  
Author(s):  
Kun Qian ◽  
Shuhua Liang ◽  
Peng Xiao ◽  
Xianhui Wang
Keyword(s):  
Electrical Properties ◽  
In Situ Synthesis

In-situ synthesis and thermal-electrical properties of CP2- polyimide/pristine and amine-functionalized carbon nanofiber composites

2009 ◽  
Author(s):  
David H. Wang ◽  
J. David Jacobs ◽  
Aaron Trionfi ◽  
Michael J. Arlen ◽  
Julia W. P. Hsu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carbon Nanofiber ◽  
In Situ Synthesis ◽  
Amine Functionalized

In situ synthesis and electrical properties of porous SiOC ceramics decorated with SiC nanowires

2016 ◽  
Vol 42 (10) ◽  
pp. 12345-12351 ◽  
Author(s):  
Jianmei Pan ◽  
Xuehua Yan ◽  
Xiaonong Cheng ◽  
Wei Shen ◽  
Shaoxin Li ◽  
...  
Keyword(s):  
Electrical Properties ◽  
In Situ Synthesis ◽  
Sic Nanowires

Electrical properties of composite based on in-situ synthesis of polyaniline and graphite

2021 ◽  
pp. 131133
Author(s):  
Meiling Gao ◽  
Xianglong Wan ◽  
Shengfa Lai ◽  
Hao Cui ◽  
Zhibo Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
In Situ Synthesis

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Hydrothermal In Situ Synthesis ZnO Nanoarrays and Their Photocatalytic Applications

2013 ◽  
Vol 30 (6) ◽  
pp. 667
Author(s):  
Zhenzhen WANG ◽  
Fangfang LI ◽  
Han GUO ◽  
Jiuju FENG ◽  
Aijun WANG
Keyword(s):  
In Situ Synthesis ◽  
Photocatalytic Applications

In situ synthesis of SiC nanowire porous layer on carbon/carbon composites

2017 ◽  
Vol 101 (3) ◽  
pp. 1371-1380 ◽  
Author(s):  
Tao Li ◽  
Yulei Zhang ◽  
Jia Sun ◽  
Jincui Ren ◽  
Pengfei Zhang ◽  
...  
Keyword(s):  
Porous Layer ◽  
In Situ Synthesis ◽  
Carbon Composites

In situ synthesis of Mn3O4/graphene nanocomposite and its application as a lubrication additive at high temperatures

2021 ◽  
Vol 546 ◽  
pp. 149019
Author(s):  
Bao Jin ◽  
Jun Zhao ◽  
Guangyan Chen ◽  
Yongyong He ◽  
Yiyao Huang ◽  
...  
Keyword(s):  
High Temperatures ◽  
In Situ Synthesis ◽  
Graphene Nanocomposite ◽  
Lubrication Additive
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