Growth kinetics of Al clusters in the gas phase produced by a magnetron-sputtering source

2012 ◽  
Vol 309 ◽  
pp. 176-181 ◽  
Author(s):  
Zhixun Luo ◽  
W. Hunter Woodward ◽  
Jordan C. Smith ◽  
A.W. Castleman
Keyword(s):  
Magnetron Sputtering ◽  
Gas Phase ◽  
Growth Kinetics ◽  
Kinetics Of

Gas-phase FT-IR analysis and growth kinetics of Al2O3 in a LP-MOCVD reactor using new dialkylacetylacetonate precursors

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-675-Pr8-681 ◽  
Author(s):  
G. A. Battiston ◽  
G. Carta ◽  
R. Gerbasi ◽  
M. Porchia ◽  
L. Rizzo ◽  
...  
Keyword(s):  
Gas Phase ◽  
Growth Kinetics ◽  
Mocvd Reactor ◽  
Ft Ir ◽  
Ir Analysis ◽  
Kinetics Of

Growth kinetics of chemically vapor deposited SiO2 films from silane oxidation

1998 ◽  
Vol 13 (8) ◽  
pp. 2308-2314 ◽  
Author(s):  
Fernando Ojeda ◽  
Alejandro Castro-García ◽  
Cristina Gómez-Aleixandre ◽  
José María Albella
Keyword(s):  
Gas Phase ◽  
Deposition Rate ◽  
Growth Kinetics ◽  
Film Growth ◽  
Chemical Vapor ◽  
Intermediate Species ◽  
Pressure Oxygen ◽  
Pressure Chemical ◽  
Different Temperatures ◽  
Kinetics Of

The growth kinetics of SiO2 thin films obtained by low-pressure chemical vapor deposition (CVD) from SiH4/O2/N2 gas mixtures has been determined at different temperatures and flow rates. The results show that the film growth is originated by some intermediate species (e.g., SiOxHy) produced in the gas phase. At low temperatures the deposition rate is limited by some homogeneous reaction with an apparent activation energy of 1.42 eV. Furthermore, the observation of critical limits when total pressure, oxygen/silane flow ratio, and temperature are decreased gives support to a branching-chain mechanism of deposition. Finally, we have observed that the deposition rate shows a hysteresis behavior when varying the temperature within the 300–400 °C range, which has been attributed to the inhibition of silane oxidation by the Si–OH surface groups of the films grown on the reactor walls.

Study of Growth Kinetics of Ultra-Long Carbon Nanotube Arrays through Wall Number Statistical Investigation

2009 ◽  
Vol 1204 ◽  
Author(s):  
Xinwei Cui ◽  
Weifeng Wei ◽  
Weixing Chen
Keyword(s):  
Gas Phase ◽  
Growth Kinetics ◽  
Chemical Vapor ◽  
Statistical Investigation ◽  
Nanotube Arrays ◽  
Flow Rates ◽  
Hydrogen Flow ◽  
Carbon Nanotube Arrays ◽  
Statistical Studies ◽  
Kinetics Of

AbstractThe unique properties of carbon nanotubes (CNTs) strongly depend on their structures. In this study, the growth kinetics of ultra-long multi-walled CNT (MWCNT) arrays by water-assisted chemical vapor deposition (WACVD) has been investigated based on the statistical studies of CNT wall number. It was found that the kinetics of MWCNT arrays in WACVD demonstrated a lengthening and thickening growth. In the linear lengthening stage, CNT wall number remains constant and catalysts preserve the activity; while in the thickening stage, CNTs thicken substantially through the gas phase-induced thickening process and catalysts start to deactivate. The effects of ethylene and hydrogen flow rates on the MWCNT array growth have also been studied. It was found that by changing ethylene flow rate, different linear lengthening stages corresponding to different CNT wall numbers could be obtained. These findings provide experimental solutions to fabrication MWCNT arrays with both selective heights and controllable wall numbers by WACVD.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Growth Kinetics of Quantum Size ZnO Particles

1998 ◽  
Vol 536 ◽  
Author(s):  
E. M. Wong ◽  
J. E. Bonevich ◽  
P. C. Searson
Keyword(s):  
Growth Kinetics ◽  
Ostwald Ripening ◽  
Chemical Potential ◽  
Colloidal Suspensions ◽  
Green Emission ◽  
Blue Shift ◽  
Constant Current ◽  
Mass Model ◽  
Zno Particles ◽  
Kinetics Of

AbstractColloidal chemistry techniques were used to synthesize ZnO particles in the nanometer size regime. The particle aging kinetics were determined by monitoring the optical band edge absorption and using the effective mass model to approximate the particle size as a function of time. We show that the growth kinetics of the ZnO particles follow the Lifshitz, Slyozov, Wagner theory for Ostwald ripening. In this model, the higher curvature and hence chemical potential of smaller particles provides a driving force for dissolution. The larger particles continue to grow by diffusion limited transport of species dissolved in solution. Thin films were fabricated by constant current electrophoretic deposition (EPD) of the ZnO quantum particles from these colloidal suspensions. All the films exhibited a blue shift relative to the characteristic green emission associated with bulk ZnO. The optical characteristics of the particles in the colloidal suspensions were found to translate to the films.

Growth kinetics of boride layers formed on GGG 40.3 ductile iron

2016 ◽  
Vol 58 (5) ◽  
pp. 418-421
Author(s):  
Fatma Ünal ◽  
Ahmet Topuz
Keyword(s):  
Growth Kinetics ◽  
Ductile Iron ◽  
Kinetics Of

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

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