High annealing temperature-random amplified polymorphic DNA (HAT-RAPD) analysis of three paramphistome flukes from Thailand

2007 ◽  
Vol 115 (1) ◽  
pp. 98-102 ◽  
Author(s):  
Pralongyut Sripalwit ◽  
Chalobol Wongsawad ◽  
Pheravut Wongsawad ◽  
Somboon Anuntalabhochai
Keyword(s):  
Annealing Temperature ◽  
Rapd Analysis ◽  
Random Amplified Polymorphic Dna ◽  
High Annealing Temperature ◽  
High Annealing

scholarly journals Optimized RAPD Analysis Generates High-Quality Genomic DNA Profiles at High Annealing Temperature

BioTechniques ◽  
2000 ◽  
Vol 28 (1) ◽  
pp. 52-54 ◽  
Author(s):  
F. Atienzar ◽  
A. Evenden ◽  
A. Jha ◽  
D. Savva ◽  
M. Depledge
Keyword(s):  
Genomic Dna ◽  
Annealing Temperature ◽  
Rapd Analysis ◽  
High Annealing Temperature ◽  
High Quality ◽  
High Annealing ◽  
Dna Profiles

Static Recrystallization in Aluminum/Graphene Composites

2021 ◽  
Vol 1016 ◽  
pp. 1636-1641
Author(s):  
Xiao Dong Wu ◽  
Xiao Li Liu ◽  
Ling Fei Cao ◽  
Guang Jie Huang
Keyword(s):  
Annealing Temperature ◽  
Static Recrystallization ◽  
Recrystallization Behavior ◽  
High Annealing Temperature ◽  
Graphene Composite ◽  
Pinning Effect ◽  
High Annealing ◽  
Rolled Aluminum ◽  
Strong Pinning ◽  
Cold Rolled

The aim of this work was to analyze the recrystallization behavior of cold rolled Aluminum/graphene composites during annealing. The Aluminum/graphene composite was cold rolled firstly, and then annealed at different temperature (250°C, 300°C, 350°C, 400°C) and for various time (1 h, 2 h, 8 h, 32 h). Full recrystallization did not occur until the annealing temperature was above 300 °C. With annealing temperature increasing from 250 to 300°C, the hardness of the composites decreased from 49.6 to 27.6 HV. Grain growth were not observed at high annealing temperature and longer annealing time, which suggested that Graphene has strong pinning effect on the grain boundary of Aluminum.

Development of AIIBVI Semiconductors Doped with Cr for IRLaser Application

2001 ◽  
Vol 692 ◽  
Author(s):  
V. A. Kasiyan ◽  
R. Z. Shneck ◽  
Z. M. Dashevsky ◽  
S. R. Rotman
Keyword(s):  
Annealing Temperature ◽  
Optical Measurements ◽  
High Electron ◽  
Native Defect ◽  
High Annealing Temperature ◽  
High Electron Mobility ◽  
Gas Source ◽  
Low Temperature Annealing ◽  
High Annealing ◽  
Absorption Measurements

AbstractElectrical and optical measurements obtained with CdSe single crystals doped with chromium from a gas source CrSe over a wide temperature range (500–1050 °C) are compared with ZnSe annealed in liquid metal (Zn). These processes are intended to control the concentrations of the impurity and intrinsic defects. The low temperature annealing of CdSe crystals in CrSe atmosphere allows obtaining high electron mobility up to 9000 cm2/Vs at 80 K and demonstrates the low native defect concentration. A high temperature annealing gives rise to increased electron concentration with decreased mobility. Optical absorption measurements show that at the high annealing temperature effective doping with Cr takes place. The impurity absorption beyond the absorption edge is interpreted by the excitation of Cr++ and Cr+ deep levels

scholarly journals Effect of Annealing on the Interface and Mechanical Properties of Cu-Al-Cu Laminated Composite Prepared with Cold Rolling

Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 369
Author(s):  
Xing Fu ◽  
Rui Wang ◽  
Qingfeng Zhu ◽  
Ping Wang ◽  
Yubo Zuo
Keyword(s):  
Mechanical Properties ◽  
Annealing Temperature ◽  
Laminated Composite ◽  
Phase Evolution ◽  
Annealing Process ◽  
High Annealing Temperature ◽  
Roll Bonding ◽  
Cold Roll ◽  
High Annealing ◽  
Cold Roll Bonding

Cu-Al-Cu laminated composite was prepared with cold roll bonding process and annealing was carried out to study the phase evolution during the annealing process and its effect on the mechanical properties of the composite. The experimental results showed that after annealing the brittle intermetallics in the interface mainly includes Al4Cu9, AlCu and Al2Cu. With the increase of annealing temperature, the tensile strength of the composite decreases and the elongation shows a different variation which increases at the beginning and then decreases after a critical point. This phenomenon is related to the evolution of intermetallic compounds in the interface of the composite. It was also found that the crack source of the tensile sample is in the interface and delamination appeared at high annealing temperature (450 °C).

Effect of Annealing Temperature on Mechanical Properties of Cold Drawn Pearlitic Steel Wires

2006 ◽  
Vol 118 ◽  
pp. 31-34 ◽  
Author(s):  
Won Jong Nam ◽  
Hyung Rak Song ◽  
Kyung Tae Park
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Pearlitic Steel ◽  
High Annealing Temperature ◽  
Annealing Temperatures ◽  
Steel Wires ◽  
High Annealing

The effects of annealing temperature and annealing time on mechanical properties of cold drawn pearlitic steel wires containing 0.84wt% of silicon were investigated. Annealing treatment was performed on cold drawn steel wires for the temperature range of 200°C to 450°C with the different annealing time of 30sec, 1min, 15min and 1hr. The increase of tensile strength at the low annealing temperatures would be related with strain ageing behavior, while the decrease of tensile strength at the high annealing temperature is due to the spheroidization of cementite plates and the occurrence of recovery of the lamellar ferrite in the pearlite.

scholarly journals Comparing Thermal Durability and Effects of Annealing Temperature on Characteristics of Hydrogen-Doped ZnO, AZO, and GZO Thin Films

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Dung Van Hoang ◽  
Anh Tuan Thanh Pham ◽  
Truong Huu Nguyen ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Hydrogen Atoms ◽  
High Annealing Temperature ◽  
Thermal Durability ◽  
Glass Substrates ◽  
High Annealing ◽  
Doped Zno

In this work, undoped, aluminum-, and gallium-doped ZnO thin films (ZnO-H, AZO-H, and GZO-H, respectively) deposited on soda-lime glass substrates by magnetron sputtering method in a gas mixture of hydrogen and argon are annealed at various temperatures in the range of 200–500°C in air to evaluate the durability of those films under annealing temperature. From photoluminescence spectra, formation of point defects, especially oxygen vacancies, when hydrogen diffuses out of the films at high annealing temperature is exhibited via a significant increase of visible emissions. We find out that carrier concentration and Hall mobility of AZO-H and ZnO-H films dramatically decrease, while those of GZO-H film are still stable as the annealing temperature increased from 200°C to 300°C. We proposed a model for interpreting the thermal durability of GZO-H film that, at an annealing temperature of 300°C, Ga3+ ions located at adjacent Zn sites can push hydrogen atoms, which are broken out of the antibonding sites which are perpendicular to the c -axis (AB┴), into bond center sites paralleled to the c -axis (BC//). The movement of hydrogen from AB┴ to BC// site also gives rise to the durability of electrical properties of GZO-H films at the high annealing temperature.

Sign in / Sign up

Export Citation Format

Share Document