XPS and AFM investigation of hafnium dioxide thin films prepared by atomic layer deposition on silicon

2007 ◽  
Vol 156-158 ◽  
pp. 150-154 ◽  
Author(s):  
V. Sammelselg ◽  
R. Rammula ◽  
J. Aarik ◽  
A. Kikas ◽  
K. Kooser ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Hafnium Dioxide ◽  
Layer Deposition

scholarly journals Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 136 ◽  
Author(s):  
Zhigang Xiao ◽  
Kim Kisslinger ◽  
Sam Chance ◽  
Samuel Banks
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Zirconium Dioxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Hafnium Dioxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Layer Deposition

We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH3)2]4) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH3)2]4) were used as the precursors, while O2 gas was used as the reactive gas. The PE-ALD-grown HfO2 and ZrO2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO2 film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO2 film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO2 and ZrO2 films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO2 and ZrO2 thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO2 and ZrO2 thin films were compared.

Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water

2005 ◽  
Vol 491 (1-2) ◽  
pp. 328-338 ◽  
Author(s):  
Kaupo Kukli ◽  
Tero Pilvi ◽  
Mikko Ritala ◽  
Timo Sajavaara ◽  
Jun Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Hafnium Dioxide ◽  
Layer Deposition

Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition

2000 ◽  
Vol 220 (1-2) ◽  
pp. 105-113 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Hugo Mändar ◽  
Väino Sammelselg ◽  
Teet Uustare
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Hafnium Dioxide ◽  
Texture Development ◽  
Layer Deposition

Rapid thermal processing of hafnium dioxide thin films by remote plasma atomic layer deposition as high-k dielectrics

2018 ◽  
Vol 660 ◽  
pp. 797-801 ◽  
Author(s):  
Xiao-Ying Zhang ◽  
Chia-Hsun Hsu ◽  
Yun-Shao Cho ◽  
Sam Zhang ◽  
Shui-Yang Lien ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Hafnium Dioxide ◽  
Remote Plasma ◽  
Layer Deposition ◽  
High K

Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures

2001 ◽  
Vol 173 (1-2) ◽  
pp. 15-21 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Hugo Mändar ◽  
Teet Uustare ◽  
Kaupo Kukli ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Phase Transformations ◽  
High Temperatures ◽  
Atomic Layer ◽  
Hafnium Dioxide ◽  
Layer Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition
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