In situ photoemission spectroscopic study on La1−xSrxMnO3 thin films grown by combinatorial laser-MBE

2004 ◽  
Vol 136 (1-2) ◽  
pp. 31-36 ◽  
Author(s):  
H Kumigashira ◽  
K Horiba ◽  
H Ohguchi ◽  
D Kobayashi ◽  
M Oshima ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Study ◽  
Laser Mbe

In situ angle-resolved photoemission study on La1−xSrxMnO3 thin films grown by laser MBE

2005 ◽  
Vol 144-147 ◽  
pp. 511-514 ◽  
Author(s):  
A. Chikamatsu ◽  
H. Wadati ◽  
M. Takizawa ◽  
R. Hashimoto ◽  
H. Kumigashira ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Mbe ◽  
Photoemission Study

Novel Process for Ceramic Epitaxy Using Laser Mbe

1990 ◽  
Vol 201 ◽  
Author(s):  
Mamoru Yoshimoto ◽  
Hirotoshi Nagata ◽  
Tadashi Tsukahara ◽  
Satoshi Gonda ◽  
Hideomi Koinuma
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Xps Analysis ◽  
Heteroepitaxial Growth ◽  
Ceramic Thin Films ◽  
Depth Analysis ◽  
Band Profile ◽  
Arf Excimer Laser ◽  
Laser Mbe

AbstractAn ArF excimer laser MBE system specially designed for the deposition of ceramic thin films was used to construct atomi-cally defined epitaxial SrCuO2−x films. According to XPS analysis, Cu valence was evaluated to be 2+ in the film as-grown in the presence of 10−7 Torr NO2, but it was less than 2+ in the film prepared in the presence of 10−7Torr 02. In situ XPS depth analysis of as-grown SrCuO2−x film on SrTiO3 substrate revealed the band profile at the interface of the film and substarte. Ceramic superlattices composed of metallic SrCuO2−x (3∼8nm thick) and insulative SrTiO3 (8nm thick) were prepared by sequential heteroepitaxial growth.

Atomic-scale Analysis of Laser MBE Growth of Oxide Thin Films by in situ Rheed and Caiciss

1997 ◽  
Vol 502 ◽  
Author(s):  
M. Yoshimoto ◽  
T. Ohnishi ◽  
G-H. Lee ◽  
K. Sasaki ◽  
H. Maruta ◽  
...  
Keyword(s):  
Thin Films ◽  
High Energy ◽  
Atomic Scale ◽  
Oxide Thin Film ◽  
Ex Situ ◽  
Ion Scattering ◽  
Oxide Thin Films ◽  
Ion Scattering Spectroscopy ◽  
Laser Mbe

ABSTRACTAtomic-scale growth analysis of oxide thin films was performed by in situ reflection high energy electron diffraction (RHEED) and coaxial impact collision ion scattering spectroscopy (CAICISS) combined with Laser MBE. On single crystal substrates with atomically flat terrace and step structures, the two-dimensional nucleation followed by molecular layer-by-layer growth was verified by in situ monitoring of RHEED intensity oscillations, as well as ex situ atomic force microscopy (AFM) observation, for the growth of BaTiO3, Al2O3 and BaO thin films. The epitaxial BaTiO3 films grown on SrTiO3(100) and c-axis oriented Bi2Sr2CaCu2Ox (Bi2212) superconducting films were subjected to in situ CAICISS measurements in order to examine the topmost surface structure. The key factors to develop oxide lattice engineering are discussed with respect to not only in situ monitoring of the growth process using RHEED but also the atomic regulation of the substrate surface by AFM and ion scattering spectroscopy. The present work also demonstrates the advanced oxide thin film processing based on the laser MBE to control the growth and surface of films on an atomic scale.

In situ Mn 2p–3d resonant photoemission study on La0.6Sr0.4MnO3 epitaxial thin films grown by laser MBE

2004 ◽  
Vol 272-276 ◽  
pp. 436-437 ◽  
Author(s):  
K Horiba ◽  
H Ohguchi ◽  
D Kobayashi ◽  
H Kumigashira ◽  
M Oshima ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
Resonant Photoemission ◽  
Laser Mbe ◽  
Photoemission Study

In Situ Infrared Spectroscopic Study of Atomic Layer-Deposited TiO2 Thin Films by Nonaqueous Routes

2013 ◽  
Vol 25 (9) ◽  
pp. 1706-1712 ◽  
Author(s):  
Karla Bernal Ramos ◽  
Guylhaine Clavel ◽  
Catherine Marichy ◽  
Wilfredo Cabrera ◽  
Nicola Pinna ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Study ◽  
Atomic Layer ◽  
Infrared Spectroscopic Study ◽  
Tio2 Thin Films ◽  
Infrared Spectroscopic

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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