Role of acidic and basic electrolytes on the structure and morphology of cathodically reduced indium tin oxide (ITO) substrates

2013 ◽  
Vol 108 ◽  
pp. 520-524 ◽  
Author(s):  
E.R. Spada ◽  
F.R. de Paula ◽  
C.C. Plá Cid ◽  
G. Candiotto ◽  
R.M. Faria ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Structure And Morphology

The role of Dawson Polyoxometalates as interfacial layers on the energy band alignment between indium tin oxide and poly(3-hexylthiophene) films

2019 ◽  
Vol 676 ◽  
pp. 92-99
Author(s):  
Dimitris Tsikritzis ◽  
Charalampos Tselios ◽  
Antonios M. Douvas ◽  
Stella Kennou
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Energy Band ◽  
Band Alignment ◽  
Interfacial Layers

Nanoreactors or nanoscale stablizers: routes for solution processed indium tin oxide nanoparticles by reverse micelle deposition

2014 ◽  
Vol 92 (7/8) ◽  
pp. 797-801 ◽  
Author(s):  
Hyeonghwa Yu ◽  
Ayse Turak
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reverse Micelle ◽  
Organic Ligands ◽  
Oxide Nanoparticles ◽  
Reaction Sequence ◽  
Solution Precursor ◽  
Tin Oxide Nanoparticles ◽  
Indium Tin Oxide Nanoparticles

The production of nanoparticles from solution typically involves the use of complex solution additives or particle functionalization with organic ligands to prevent aggregation. Another approach would be to produce the particles within a nanoscale environment, such as inside a micelle. In this contribution, we produced indium tin oxide nanoparticles using the diblock copolymer reverse micelle approach. We examined different solution precursor routes without any additives. Additionally, we examined the role of the reaction sequence, either nanoparticle formation outside the micelles or using the micelle itself as a nanoreactor.

The role of NaF post-deposition treatment on the photovoltaic characteristics of semitransparent ultrathin Cu(In,Ga)Se2 solar cells prepared on indium-tin-oxide back contacts: a comparative study

2019 ◽  
Vol 7 (38) ◽  
pp. 21843-21853 ◽  
Author(s):  
Muhammad Saifullah ◽  
Dongryeol Kim ◽  
Jun-Sik Cho ◽  
Seungkyu Ahn ◽  
SeJin Ahn ◽  
...  
Keyword(s):  
Solar Cells ◽  
Comparative Study ◽  
Conversion Efficiency ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photovoltaic Conversion ◽  
Photovoltaic Conversion Efficiency ◽  
Photovoltaic Characteristics ◽  
Post Deposition

NaF post-deposition treatment considerably enhanced the photovoltaic conversion efficiency of <500 nm thick Cu(In, Ga)Se2 absorber-based solar cells.

scholarly journals Role of Structure and Composition on the Performances of p-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

2019 ◽  
Author(s):  
Raquel Barros ◽  
Kachirayil J. Saji ◽  
João C. Waerenborgh ◽  
Pedro Barquinha ◽  
Luis Pereira ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Spectroscopic Studies ◽  
Oxide Thin Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

This work reports the role of structure and composition on the determination of the performances of p-type SnOx TFTs deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 &deg;C at different oxygen partial pressures (Opp), between 0% and 20%, but where the p-type conduction was only observed between 2.8&ndash;3.8%. The role of structure and composition were evaluated by XRD and M&ouml;ssbauer spectroscopic studies. The study allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used that lead to the production of TFTs with a bottom gate configuration, on glasses coated with conductive Indium Tin Oxide, followed by Aluminium Titanium Oxide dielectric layer with saturation mobility of 4.6 cm2V&minus;1s&minus;1 and on-off ratio above 7 &times; 104, operating at the enhancement mode with a saturation voltage of &minus;10 V.

scholarly journals Исследование влияния особенностей конструкции установки магнетронного распыления на электрические и оптические свойства пленок оксида индия-олова

2021 ◽  
Vol 55 (4) ◽  
pp. 360
Author(s):  
Д.А. Кудряшов ◽  
А.А. Максимова ◽  
Е.А. Вячеславова ◽  
А.В. Уваров ◽  
И.А. Морозов ◽  
...  
Keyword(s):  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Wavelength Region ◽  
Electrical And Optical Properties ◽  
Short Wavelength Region ◽  
Order Of Magnitude ◽  
Oxygen Addition ◽  
Ito Films

The influence of the relative position of the magnetron and the substrate on the electrical and optical properties of the forming indium tin oxide (ITO) layers is demonstrated. The reasons for this behavior are considered and the role of oxygen in the onset of inhomogeneity of the properties of ITO films is shown. It is shown that, in the growth mode without additional oxygen addition, the resistivity of ITO films differs by an order of magnitude ((2−14)·10^−2 Ohm·cm) for different positions of the substrate on the substrate holder along the radius in the range of 0−14cm. In this case, absorption spectra are observed differences in the shape of the short-wavelength region of the spectrum. The addition of an insignificant (0.1sccm) amount of oxygen to the working chamber during the growth of the oxide leads to a significant increase in the homogeneity of the electrical and optical properties of ITO

The role of amine in the sequestration of As (III) on functionalized indium tin oxide

2021 ◽  
Vol 538 ◽  
pp. 147652
Author(s):  
Prescott E. Evans ◽  
Andrew J. Yost ◽  
Kayleigh A. McElveen ◽  
Qin-Yin Shi ◽  
Thilini K. Ekanayaka ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide
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