Effect of sulfosalicylic acid (C7H6O6S) on the electrodeposition of pure ZnS nanocrystal thin films from acidic solutions

2013 ◽  
Vol 87 ◽  
pp. 511-517 ◽  
Author(s):  
Xinhua Xu ◽  
Feng Wang ◽  
Zhilin Li ◽  
Jingjun Liu ◽  
Jing Ji ◽  
...  
Keyword(s):  
Thin Films ◽  
Sulfosalicylic Acid ◽  
Acidic Solutions

Electrochemical Cementation Phenomena on Polycrystalline Molybdenum Thin Films from Cu(II)–In(III)–Se(IV) Acidic Solutions

2007 ◽  
Vol 154 (8) ◽  
pp. D383 ◽  
Author(s):  
O. Ramdani ◽  
E. Chassaing ◽  
B. Canava ◽  
P.-P. Grand ◽  
O. Roussel ◽  
...  
Keyword(s):  
Thin Films ◽  
Acidic Solutions ◽  
Polycrystalline Molybdenum

scholarly journals Effect of Salicylic Acid and 5-Sulfosalicylic Acid on UV-Vis Spectroscopic Characteristics, Morphology, and Contact Angles of Spin Coated Polyaniline and Poly(4-aminodiphenylaniline) Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
A. Sironi ◽  
D. Marinotto ◽  
C. Riccardi ◽  
S. Zanini ◽  
E. Guerrini ◽  
...  
Keyword(s):  
Thin Films ◽  
Salicylic Acid ◽  
Surface Morphology ◽  
Traditional Method ◽  
Contact Angles ◽  
Sulfosalicylic Acid ◽  
Green Method ◽  
Water Contact ◽  
Spectroscopic Characteristics

Polyaniline and poly(4-aminodiphenyl)aniline have been prepared following two different synthetic protocols (a traditional method and a “green” method). Both the polymers have been spin coated with salicylic acid and 5-sulfosalicylic acid as the dopants, in order to obtain them in form of thin films. These materials have been characterized, thereof achieving important information on their water contact angles and surface morphology.

Electrodeposition of CuInxGa1−xSe2 thin films from sulfosalicylic acid

2013 ◽  
Vol 107 ◽  
pp. 120-125 ◽  
Author(s):  
Margarita Dergacheva ◽  
Kazhmukan Urazov
Keyword(s):  
Thin Films ◽  
Sulfosalicylic Acid

scholarly journals Hydrogen evolution at conjugated polymer nanoparticle electrodes

2018 ◽  
Vol 96 (2) ◽  
pp. 148-157 ◽  
Author(s):  
Patrick Fortin ◽  
Subash Rajasekar ◽  
Pankaj Chowdhury ◽  
Steven Holdcroft
Keyword(s):  
Thin Films ◽  
Hydrogen Evolution ◽  
Bulk Heterojunction ◽  
Composite Films ◽  
Organic Thin Films ◽  
Phase Segregation ◽  
Organic Polymer ◽  
Acidic Solutions ◽  
Solution Cast ◽  
Conventional Solution

Organic polymer nanoparticles have been gaining attention in photovoltaics as a means to control the morphology of polymer composite films for the purpose of studying bulk heterojunction, photoactive layers. This work investigates the preparation of nanostructured organic thin films from P3HT:PC61BM nanoparticles and their characterization as photoelectrodes for the photoelectrochemical reduction of hydrogen in acidic solutions. The morphology and optoelectronic properties of the nanostructured photocathodes are compared with conventional, solution-cast thin films of P3HT:PC61BM. The nanostructured photoelectrodes provide increased surface area compared with solution-cast films through control of the nanoscale morphology within each nanoparticle, leading to enhanced P3HT:PC61BM phase segregation. The photo-assisted deposition of platinum nanoparticles as hydrogen evolution reaction (HER) catalysts onto the nanostructured P3HT:PC61BM photocathodes facilitates the photoreduction of protons to H2.

Nucleation of Binary Cu-Se Phases and Electrochemical Cementation Mechanism on Polycrystalline Molybdenum Thin Films in Cu(II)-In(III)-Se(IV) Acidic Solutions

2019 ◽  
Vol 2 (6) ◽  
pp. 369-378 ◽  
Author(s):  
Elisabeth Chassaing ◽  
Omar Ramdani ◽  
Bruno Canava ◽  
Pierre-Philippe Grand ◽  
Mélanie Lamirand ◽  
...  
Keyword(s):  
Thin Films ◽  
Acidic Solutions ◽  
Polycrystalline Molybdenum

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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