Electrochemical study of one-step electrodeposition of copper–indium–gallium alloys in acidic conditions as precursor layers for Cu(In,Ga)Se2 thin film solar cells

2011 ◽  
Vol 56 (19) ◽  
pp. 6628-6637 ◽  
Author(s):  
L. Ribeaucourt ◽  
G. Savidand ◽  
D. Lincot ◽  
E. Chassaing
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Electrochemical Study ◽  
Copper Indium ◽  
One Step ◽  
Gallium Alloys ◽  
Acidic Conditions ◽  
Indium Gallium ◽  
Copper Indium Gallium

Ionizing radiation effects in copper indium gallium diselenide thin-film solar cells

2002 ◽  
Vol 91 (1) ◽  
pp. 516 ◽  
Author(s):  
J. Tringe ◽  
J. Nocerino ◽  
R. Tallon ◽  
W. Kemp ◽  
W. Shafarman ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Ionizing Radiation ◽  
Radiation Effects ◽  
Thin Film Solar Cells ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Comparative Study of the Second Generation a-Si:H, CdTe, and CIGS Thin-Film Solar Cells

2019 ◽  
Vol 1154 ◽  
pp. 102-111 ◽  
Author(s):  
Md. Mahabub Alam Moon ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Second Generation ◽  
Operating Temperature ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film ◽  
Copper Indium ◽  
Indium Gallium ◽  
Hydrogenated Amorphous ◽  
Copper Indium Gallium

In this article, simulation results of novel and facilitated heterostructures of the Second Generation (2G) Thin-film Solar Cells (TFSCs): hydrogenated amorphous Silicon (a-Si:H), Cadmium Telluride (CdTe), and Copper Indium Gallium di-Selenide (Cu(In,Ga)Se2or CIGS) have been presented to compare their performances. The solar cells have been modeled and analyzed for investigating optimized structure with higher stabilized efficiency. Entire simulations have been accomplished using Analysis of Microelectronic and Photonic Structures – 1 Dimensional (AMPS-1D) device simulator. The thickness of the absorber layer was varied from 50 nm to 1400 nm for a-Si:H and from 50 nm to 3 μm for both CdTe and CIGS cells to realize its impact on cell performance. The utmost efficiency, η of 9.134%, 20.776%, and 23.03% were achieved at AM 1.5 (1000 W/m2) for a-Si:H, CdTe, and CIGS material cells, respectively. Lastly, the operating temperature of the three cells was varied from 280°K to 328°K to realize its effect on the cell PV performances.

scholarly journals Research on Copper Indium Gallium Selenide (CIGS) Thin-Film Solar Cells

2021 ◽  
Vol 267 ◽  
pp. 02031
Author(s):  
Jixiang Zhou ◽  
Changyu Li
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cells ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Thin Film ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

As a new-style solar cell, copper indium gallium selenide (CIGS) thin-film solar cell owns excellent characteristics of solar energy absorption, and it is one of the widely used thin-film solar cells. This paper mainly focuses on the research progress of this type of solar cell. Firstly, its theoretical principles are briefly described. Then, its cell materials, configuration and fabrication procedure are introduced. Subsequently, the remarkable research work about CIGS solar cell are reviewed. Finally, its commercial status is illustrated, followed by the critical issues and future perspectives.

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