Mobility enhancement of hole transporting layer in quantum-dot light-emitting diodes incorporating single-walled carbon nanotubes

2017 ◽  
Vol 73 ◽  
pp. 154-160 ◽  
Author(s):  
Jonghee Yang ◽  
Jongtaek Lee ◽  
Junyoung Lee ◽  
Taehun Park ◽  
Sang Jung Ahn ◽  
...  
2017 ◽  
Vol 17 (8) ◽  
pp. 5496-5500 ◽  
Author(s):  
Junyoung Lee ◽  
Jongtaek Lee ◽  
Jonghee Yang ◽  
Taehun Park ◽  
Sang Jung Ahn ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (46) ◽  
pp. 36865-36873 ◽  
Author(s):  
M. K. Bayazit ◽  
L. O. Pålsson ◽  
K. S. Coleman

Fluorescent single walled carbon nanotube-mediated sensors with a detection limit of ∼10−8 M for nitrophenol based chemical warfare agents and environmental pollutants.


2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Xu Wang ◽  
Jack A. Alexander-Webber ◽  
Wei Jia ◽  
Benjamin P. L. Reid ◽  
Samuel D. Stranks ◽  
...  

2013 ◽  
Vol 64 (5) ◽  
pp. 323-326 ◽  
Author(s):  
Jozef Liday ◽  
Peter Vogrinčič ◽  
Viliam Vretenár ◽  
Mário Kotlár ◽  
Marián Marton ◽  
...  

Abstract We have designed and verified a new structure for ohmic contacts to p-GaN, mainly for applications in light emitting devices based on a layer of single-walled carbon nanotubes (SWCNT) and metallic layers of Cr and Au, namely in configuration Au/Cr/SWCNT/p-GaN. The layer of carbon nanotubes was deposited on p-GaN by spraying a solution of synthesized SWCNTs, while the layers of Cr and Au were vapour deposited. The effects of the annealing temperature and time upon the electrical properties of Au/Cr/SWCNT/p-GaN contacts have been studied. It has been found that the contact structure provides a low resistivity ohmic contact after subsequent annealing in N2 ambient at 700 °C for 1 minute.


2013 ◽  
Vol 25 (13) ◽  
pp. 2663-2669 ◽  
Author(s):  
Julia Schornbaum ◽  
Benjamin Winter ◽  
Stefan P. Schießl ◽  
Benjamin Butz ◽  
Erdmann Spiecker ◽  
...  

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