Raman Spectroscopy and Kelvin Probe Force Microscopy characteristics of the CVD suspended graphene

2016 ◽  
Vol 64 ◽  
pp. 27-33 ◽  
Author(s):  
Krzysztof Gajewski ◽  
Stefan Goniszewski ◽  
Anna Szumska ◽  
Magdalena Moczaɫa ◽  
Piotr Kunicki ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Suspended Graphene ◽  
Force Microscopy

Characterization of graphene layers by Kelvin probe force microscopy and micro-Raman spectroscopy

2013 ◽  
Vol 10 (7-8) ◽  
pp. 1172-1175 ◽  
Author(s):  
A. N. Nazarov ◽  
S. O. Gordienko ◽  
P. M. Lytvyn ◽  
V. V. Strelchuk ◽  
A. S. Nikolenko ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy

Observing Electrochemical Reactions on Suspended Graphene: An Operando Kelvin Probe Force Microscopy Approach

2021 ◽  
pp. 2100662
Author(s):  
Salma Khatun ◽  
Sidney R. Cohen ◽  
Sa'ar Shor Peled ◽  
Irit Rosenhek‐Goldian ◽  
Robert S. Weatherup ◽  
...  
Keyword(s):  
Kelvin Probe Force Microscopy ◽  
Electrochemical Reactions ◽  
Kelvin Probe ◽  
Suspended Graphene ◽  
Force Microscopy

Electronic characterization of single-layer MoS2 sheets exfoliated on SrTiO3

2012 ◽  
Vol 1474 ◽  
Author(s):  
Benedict Kleine Bußmann ◽  
Kolyo Marinov ◽  
Oliver Ochedowski ◽  
Nils Scheuschner ◽  
Janina Maultzsch ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Layer ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Direct Bandgap ◽  
Force Microscopy ◽  
Dipole Layer ◽  
Good Agreement

ABSTRACTSingle layer regions of MoS2 on SiO2 and SrTiO3 were identified by Raman spectroscopy and μ-photoluminescence before Kelvin probe force microscopy was performed. For the already known system MoS2/SiO2 we find 1.839 eV for the direct bandgap, in good agreement with earlier results. On MoS2/SrTiO3 the direct bandgap was determined to be 1.829 eV. From our Kelvin probe data we infer that the SrTiO3 substrate leads to a dipole layer at the interface of the MoS2 single layer. The corresponding μ-PL measurements however show no significant decrease of the bandgap. This shows, that in the case of MoS2 the carrier type as well as concentration is not significantly influenced by the choice of SrTiO3 as the substrate compared to SiO2.

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