Growth of conductive and insulative highly-orientated aluminum nitride thin films using laser molecular beam epitaxy

2012 ◽  
Vol 25 ◽  
pp. 139-143 ◽  
Author(s):  
Yonghui Wu ◽  
C.H. Jia ◽  
W.F. Zhang
1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.


2008 ◽  
Vol 254 (8) ◽  
pp. 2336-2341 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Yuji Matsumoto ◽  
Tsuyoshi Ohnishi ◽  
Mikk Lippmaa ◽  
...  

2000 ◽  
Vol 212 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
Tong Zhao ◽  
Huibin Lu ◽  
Fan Chen ◽  
Shouyu Dai ◽  
Guozhen Yang ◽  
...  

2017 ◽  
Vol 18 (1) ◽  
pp. 307-315 ◽  
Author(s):  
Kazuhiro Kawashima ◽  
Yuji Okamoto ◽  
Orazmuhammet Annayev ◽  
Nobuo Toyokura ◽  
Ryota Takahashi ◽  
...  

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