Optically triggered Schottky barrier diodes in single crystal diamond

2005 ◽  
Vol 14 (3-7) ◽  
pp. 499-503 ◽  
Author(s):  
M. Brezeanu ◽  
S.J. Rashid ◽  
T. Butler ◽  
N.L. Rupesinghe ◽  
F. Udrea ◽  
...  
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Single Crystal Diamond

Free-standing Diamond Single Crystal Film for Electronics Applications

2005 ◽  
Vol 905 ◽  
Author(s):  
Jie Yang ◽  
Weixiao Huang ◽  
T. P. Chow ◽  
James E. Butler
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Chemical Properties ◽  
Structural Quality ◽  
Schottky Barrier Diodes ◽  
Free Standing ◽  
Crystal Film ◽  
Single Crystal Diamond ◽  
Transparent Semiconductor ◽  
Radiation Conditions

AbstractHigh quality single crystal diamond film is an excellent transparent semiconductor material. Combined with its good electrical, optical, thermal and chemical properties, diamond-based semiconductor devices offer the potential of operation at very high voltages (>10 kV), power levels, and temperatures (>400°C) and under extreme radiation conditions.In this paper, we exploit the optical transparent property of MPCVD single crystal diamond films to correlate the quality of the epi-layers with the performance of Schottky barrier diodes fabricated on the layer. We used optical microscopy to observe stress induced birefringence caused by defects/dislocations in the material and micro- Raman/photoluminescence to detect relative amounts of non-diamond carbon and color centers (nitrogen and silicon atom complexes with lattice vacancies) in the material. High structural quality (low stress) is correlated with the properties of Schottky barrier diodes fabricated in the material. Vertical devices made from a 20 µm homo-epi-layer have been shown high breakdown fields of 1.85 MVcm-1 (BV = 3.7 kV) and conduction of 0.6 A/cm2 at 20V forward drop at 290 °C. Through device failure analysis, we can conclude that the 1.85 MVcm-1 field is only a lower limit for the material. Local stresses (dislocations) and point defects appear to be the main reasons for the high voltage failure of our single crystal diamond rectifiers.

Diamond Schottky barrier diodes on half-inch single-crystal wafers fabricated by Minimal Fab System

2019 ◽  
Author(s):  
T. Hanada ◽  
H. Umezawa ◽  
S. Ohmagari ◽  
D. Takeuchi ◽  
J.Higedon Kaneko
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes

scholarly journals Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Schottky Barrier ◽  
Deep Level ◽  
Depletion Region ◽  
Intrinsic Defect ◽  
Defect State ◽  
Schottky Barrier Diodes ◽  
Defect States ◽  
State Distribution

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.

Vertical Ga2O3 Schottky barrier diodes on single-crystal β-Ga2O3 (−201) substrates

2016 ◽  
Author(s):  
Bo Song ◽  
Amit Kumar Verma ◽  
Kazuki Nomoto ◽  
Mingda Zhu ◽  
Debdeep Jena ◽  
...  
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes

Effective surface diffusion of nickel on single crystal β-Ga2O3for Schottky barrier modulation and high thermal stability

2019 ◽  
Vol 7 (35) ◽  
pp. 10953-10960 ◽  
Author(s):  
Hojoong Kim ◽  
Sinsu Kyoung ◽  
Taiyoung Kang ◽  
Jang-Yeon Kwon ◽  
Kyung Hwan Kim ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thermal Stability ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Surface Diffusion ◽  
Schottky Contact ◽  
High Thermal Stability ◽  
Schottky Barrier Diodes ◽  
Effective Surface

β-Ga2O3Schottky barrier diodes (SBDs) were demonstrated with Ni Schottky contact deposited by the confined magnetic field-based sputtering (CMFS) method.

Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

2019 ◽  
Vol 40 (1) ◽  
pp. 012801 ◽  
Author(s):  
Tsung-Han Yang ◽  
Houqiang Fu ◽  
Hong Chen ◽  
Xuanqi Huang ◽  
Jossue Montes ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent
Sign in / Sign up

Export Citation Format

Share Document