Optimization of magneto-electro-elastic composite structures using differential evolution

2014 ◽  
Vol 107 ◽  
pp. 276-287 ◽  
Author(s):  
M.A.R. Loja ◽  
C.M. Mota Soares ◽  
J.I. Barbosa
Keyword(s):  
Differential Evolution ◽  
Composite Structures ◽  
Elastic Composite

scholarly journals Using PWE/FE Method to Calculate the Band Structures of the Semi-Infinite PCs: Periodic in x–y Plane and Finite in z -direction

2017 ◽  
Vol 42 (4) ◽  
pp. 735-742 ◽  
Author(s):  
Denghui Qian ◽  
Zhiyu Shi
Keyword(s):  
Finite Element ◽  
Band Structure ◽  
Plane Wave ◽  
Composite Structures ◽  
Phononic Crystal ◽  
Plane Wave Expansion ◽  
Fe Method ◽  
Band Structures ◽  
Wave Expansion ◽  
Elastic Composite

Abstract This paper introduces the concept of semi-infinite phononic crystal (PC) on account of the infinite periodicity in x-y plane and finiteness in z-direction. The plane wave expansion and finite element methods are coupled and formulized to calculate the band structures of the proposed periodic elastic composite structures based on the typical geometric properties. First, the coupled plane wave expansion and finite element (PWE/FE) method is applied to calculate the band structures of the Pb/rubber, steel/epoxy and steel/aluminum semi-infinite PCs with cylindrical scatters. Then, it is used to calculate the band structure of the Pb/rubber semi-infinite PC with cubic scatter. Last, the band structure of the rubbercoated Pb/epoxy three-component semi-infinite PC is calculated by the proposed method. Besides, all the results are compared with those calculated by the finite element (FE) method implemented by adopting COMSOL Multiphysics. Numerical results and further analysis demonstrate that the proposed PWE/FE method has strong applicability and high accuracy.

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

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